BY396P thru BY399P
Vishay Semiconductors
formerly General Semiconductor
Soft Recovery Fast-Switching
Plastic Rectifier
DO-201AD
Features
1.0 (25.4)
MIN.
Reverse Voltage
100 to 800 V
Forward Current
3.0 A
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• High surge current capability
• Construction utilizes void-free molded plastic technique
• 3.0 Ampere operation at T
A
=50°C with no thermal
runaway
• Fast switching for high efficiency
• High temperature soldering guaranteed:
250°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
Mechanical Data
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
Case:
JEDEC DO-201AD, molded plastic body
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.04 oz., 1.1 g
Packaging codes/options:
1/Bulk - 1.5K per container, 15K per box
4/1.4K per 13" reel, 5.6K per box
23/1K per Ammo. mag., 9K per box
Symbols
BY396P
100
70
100
BY397P
200
140
200
3.0
100
10
22
-50 to +125
-50 to +150
BY398P
400
280
400
BY399P
800
560
800
Units
V
V
V
A
A
A
°C/W
°C
°C
Maximum Ratings & Thermal Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375” (9.5mm) lead lengths at T
A
=50°C
Peak forward surge current
10ms single half sine-wave superimposed on
rated load at T
A
=50°C
Maximum repetitive peak forward surge at f < 15 KHz
Typical thermal resistance
(1)
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
FRM
R
ΘJA
T
J
T
STG
Operating junction temperature range
Storage temperature range
Electrical Characteristics
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time at
I
F
=10mA, I
R
=10mA, I
rr
=1.0mA
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum instantaneous forward voltage at 3.0A
T
A
= 25°C
T
A
=100°C
V
F
I
R
t
rr
t
fr
C
J
1.25
10
500
500
1.0
28
V
µA
ns
µs
pF
Maximum forward recovery time at 100mA, di/dt = 50A/µs
Typical junction capacitance at 4.0V, 1MHz
Notes:
(1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length with both leads to heat sink
Document Number 88542
06-Mar-02
www.vishay.com
1
BY396P thru BY399P
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Forward Current
Derating Curve
4.0
200
Fig. 2 – Maximum Non-Repetitive Peak
Forward Surge Current
T
A
= 50°C
10ms Single Half Sine-Wave
At Rated Load
Average Forward Rectified Current (A)
Peak Forward Surge Current (A)
Resistive or
Inductive Load
3.0
100
2.0
1.0
0.375" (9.5mm) Lead Length
0
0
20
40
60
80
100
120
140
10
1
10
100
Ambient Temperature (°C)
Number of Cycles at 50 H
Z
Fig. 3 – Typical Instantaneous
Forward Characteristics
100
10
Fig. 4 – Typical Reverse
Characteristics
Instantaneous Reverse Current (µA)
T
J
= 100°C
Instantaneous Forward Current (A)
10
1
1
T
J
= 25°C
Pulse Width = 300µs
1% Duty Cycle
T
J
= 50°C
0.1
0.1
T
J
= 25°C
0.01
0.4
0.01
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction Capacitance
100
T
J
= 25°C
f = 1.0MH
Z
Vsig = 50mVp-p
Junction Capacitance (pF)
10
1
10
100
Reverse Voltage (V)
www.vishay.com
2
Document Number 88542
06-Mar-02
Embedded System
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