DATA SHEET
PHOTOCOUPLER
PS8703
HIGH-SPEED (200 kbps) ANALOG OUTPUT TYPE
5-PIN SOP PHOTOCOUPLER
−NEPOC
Series−
DESCRIPTION
The PS8703 is an optically coupled isolator containing a GaAlAs LED on the light emitting diode (input side) and a
PIN photodiode and a high-speed amplifier transistor on the output side on one chip.
This is a plastic SOP (Small Out-line Package) type for high density applications.
FEATURES
• Wide operating V
CC
range (V
CC
=
−0.5
to +15 V)
• High isolation voltage (BV = 2 500 Vr.m.s.)
• High-speed response (t
PHL
, t
PLH
= 5
µ
s MAX. (@R
L
= 4.1 kΩ))
• Ordering number of taping product: PS8703-F3, F4
APPLICATIONS
• Computer and peripheral manufactures
• General purpose inverter
• Substitutions for relays and pulse transformers
• Power supply
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PN10068EJ02V0DS (2nd edition)
Date Published July 2002 CP(K)
Printed in Japan
The mark
•
shows major revised points.
©
NEC Compound Semiconductor Devices 2002
PS8703
PACKAGE DIMENSIONS (UNIT: mm)
4.0±0.5
TOP VIEW
5
4
3
1. Anode
2. Cathode
3. GND
4. V
O
5. V
CC
1
2
7.0±0.3
4.4
2.1±0.2
0.15
+0.10
–0.05
0.1±0.1
1.27
0.4
+0.10
–0.05
0.25 M
0.5±0.3
MARKING
No. 1 pin Mark
8703
N003
Assembly Lot
N
0 03
Week Assembled
Year Assembled
(Last 1 Digit)
CTR Rank Code
2
Data Sheet PN10068EJ02V0DS
PS8703
ORDERING INFORMATION
Part Number
Package
Packing Style
Application Part
*1
Number
PS8703
PS8703
PS8703-F3
PS8703-F4
5-pin SOP
Magazine case 100 pcs
Embossed Tape 3 500 pcs/reel
*1
For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, unless otherwise specified)
°
Parameter
Diode
Forward Current
Reverse Voltage
Detector
Symbol
I
F
V
R
V
CC
V
O
I
O
*1
Ratings
50
5
−0.5
to +15
−0.5
to +15
8
80
2 500
−40
to +100
−55
to +125
Unit
mA
V
V
V
mA
mW
Vr.m.s.
°C
°C
Supply Voltage
Output Voltage
Output Current
Power Dissipation
P
C
BV
T
A
T
stg
Isolation Voltage
*2
Operating Ambient Temperature
Storage Temperature
*1
Applies to output pin V
O
. Reduced to 0.8 mW/°C at T
A
= 25°C or more.
*2
AC voltage for 1 minute at T
A
= 25°C, RH = 60% between input and output.
Data Sheet PN10068EJ02V0DS
3
PS8703
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Parameter
Diode
Forward Voltage
Reverse Current
Terminal Capacitance
Detector
High Level Output Current
High Level Output Current
Low Level Output Voltage
High Level Supply Current
Low Level Supply Current
Coupled
Current Transfer Ratio (I
C
/I
F
)
Isolation Resistance
Isolation Capacitance
Propagation Delay Time
*2
(H
→
L)
Propagation Delay Time
*2
(L
→
H)
Propagation Delay Time
*2
(H
→
L)
Propagation Delay Time
*2
(L
→
H)
*1
Symbol
V
F
I
R
C
t
I
OH
(1)
I
OH
(2)
V
OL
I
CCH
I
CCL
CTR
R
I-O
C
I-O
t
PHL
I
F
= 16 mA
V
R
= 3 V
Conditions
MIN.
TYP.
1.2
MAX.
1.5
10
Unit
V
µ
A
pF
V = 0 V, f = 1 MHz
I
F
= 0 mA, V
CC
= V
O
= 5.5 V
I
F
= 0 mA, V
CC
= V
O
= 15 V
I
F
= 16 mA, V
CC
= 4.5 V, I
OL
= 1.1 mA
I
F
= 0 mA, V
O
= open, V
CC
= 15 V
I
F
= 16 mA, V
O
= open, V
CC
= 15 V
I
F
= 16 mA, V
CC
= 4.5 V, V
O
= 0.4 V
V
I-O
= 1 kV
DC
, RH = 40 to 60%
V = 0 V, f = 1 MHz
I
F
= 16 mA, V
CC
= 5 V, R
L
= 4.1 kΩ,
C
L
= 15 pF
10
10
11
30
7
500
100
0.1
0.01
150
23
0.4
1
800
30
nA
µ
A
V
µ
A
%
Ω
0.4
1
5
pF
µ
s
t
PLH
2
5
t
PHL
I
F
= 16 mA, V
CC
= 5 V, R
L
= 20 kΩ,
C
L
= 15 pF
1
15
t
PLH
7
15
*1
CTR rank
L : 15 to 30 (%)
N : 10 to 30 (%)
*2
Test circuit for propagation delay time
Pulse input (I
F
)
(Pulse width = 100
µ
s,
Duty cycle = 1/10)
Input
(Monitor)
47
Ω
t
PHL
t
PLH
V
CC
= 5 V
R
L
= 4.1/20 kΩ
V
O
(Monitor)
C
L
= 15 pF
Input
50%
5V
Output
1.5 V
V
OL
0.1
µ
F
C
L
includes probe and stray wiring capacitance.
USAGE CAUTIONS
1. This product is weak for static electricity by designed with high-speed integrated circuit so protect against static
electricity when handling.
2. By-pass capacitor of more than 0.1
µ
F is used between V
CC
and GND near device.
4
Data Sheet PN10068EJ02V0DS
PS8703
TYPICAL CHARACTERISTICS (T
A
= 25°C, unless otherwise specified)
°
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Transistor Power Dissipation P
C
(mW)
TRANSISTOR POWER DISSIPATION vs.
AMBIENT TEMPERATURE
120
100
80
60
40
20
60
Diode Power Dissipation P
D
(mW)
50
40
30
20
10
0
25
50
75
100
0
25
50
75
100
Ambient Temperature T
A
(˚C)
Ambient Temperature T
A
(˚C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
100
1 000
High Level Output Current I
OH
(nA)
HIGH LEVEL OUTPUT CURRENT vs.
AMBIENT TEMPERATURE
I
F
= 0 mA
Forward Current I
F
(mA)
10
T
A
= +100˚C
+50˚C
+25˚C
100
V
CC
= V
O
= 15 V
5.5 V
10
1
0˚C
–25˚C
0.1
1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
–25
0
25
50
75
100
Forward Voltage V
F
(V)
Ambient Temperature T
A
(˚C)
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
Current Transfer Ratio CTR (%)
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
Normalized Current Transfer Raio CTR
40
35
30
25
20
15
10
5
0
0.5
1
5
10
V
CC
= 4.5 V,
V
O
= 0.4 V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
–50
–25
0
25
50
75
100
Normalized to 1.0
at T
A
= 25˚C, I
F
= 16 mA,
V
CC
= 4.5 V, V
O
= 0.4 V
50
Forward Current I
F
(mA)
Ambient Temperature T
A
(˚C)
Data Sheet PN10068EJ02V0DS
5
Power technology
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