DRAM MODULE
KMM332V804BS/BZ-L
KMM332V804BS/BZ-L Fast Page Mode
8M x 32 DRAM SODIMM Using 4MX16, 4K Refresh, 3.3V, Low power/Self-Refresh
GENERAL DESCRIPTION
The Samsung KMM332V804B is a 8Mx32bits Dynamic RAM
high density memory module. The Samsung KMM332V804B
consists of four CMOS 4Mx16bits DRAMs in TSOPII pack-
ages mounted on a 72-pin zigzag glass-epoxy substrate. A
0.1 or 0.22uF decoupling capacitor is mounted on the printed
circuit board for each DRAM. The KMM332V804B is a Small
Out-line Dual In-line Memory Module with edge connections
and is intended for mounting into 72-pin dual readout zigzag
edge connector sockets.
FEATURES
• Part Identification
- KMM332V804BS-L5/L6
(4096 cycles/128ms Ref, TSOP, Gold, Low Power, 50/60ns)
- KMM332V804BZ-L5/L6
(4096 cycles/128ms Ref, TSOP, Solder, Low Power, 50/60ns)
• Fast Page Mode Operation
• CAS-before-RAS Refresh capability
• RAS-only and Hidden refresh capability
• TTL compatible inputs and outputs
• Single +3.3V
±0.3V
power supply
• JEDEC standard PDPin & pinout (72pin)
• PCB : Height(1000mil), double sided component
PERFORMANCE RANGE
Speed
-L5
-L6
t
RAC
50ns
60ns
t
CAC
15ns
15ns
t
RC
90ns
110ns
PIN CONFIGURATIONS
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
Symbol
V
SS
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
V
CC
PD1
A0
A1
A2
A3
A4
A5
A6
A10
NC
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
A7
A11
V
CC
A8
A9
RAS3
RAS2
DQ16
NC
Pin
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
Symbol
DQ18
DQ19
V
SS
CAS0
CAS2
CAS3
CAS1
RAS0
RAS1
NC
W
NC
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
NC
DQ27
DQ28
DQ29
DQ30
DQ31
V
CC
DQ32
DQ33
DQ34
NC
PD2
PD3
PD4
PD5
PD6
PD7
V
SS
PIN NAMES
Pin Name
A0 - A11
DQ(0 -7,9-16,
18-25,27-34)
W
RAS0 - RAS3
CAS0 - CAS3
PD1 -PD7
V
CC
V
SS
NC
Read/Write Enable
Row Address Storbe
Column Address Strobe
Presence Detect
Power(+3.3V)
Ground
No Connection
Function
Address Inputs
Data In/Out
PRESENCE DETECT PINS (Optional)
Pin
PD1
PD2
PD3
PD4
PD5
PD6
PD7
50NS
NC
NC
V
SS
V
SS
V
SS
V
SS
V
SS
60NS
NC
NC
V
SS
V
SS
NC
NC
V
SS
DRAM MODULE
ABSOLUTE MAXIMUM RATINGS *
Item
Voltage on any pin relative V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
Symbol
V
IN
, V
OUT
V
CC
T
stg
P
D
I
OS
KMM332V804BS/BZ-L
Rating
-0.5 to +4.6
-0.5 to +4.6
-55 to +150
4
50
Unit
V
V
°C
W
mA
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for in
tended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to
Item
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min
3.0
0
2.0
-0.3
*2
V
SS
, T
A
= 0 to 70°C)
Typ
3.3
0
-
-
Max
3.6
0
V
CC
+0.3
*1
0.8
Unit
V
V
V
V
*1 : V
CC
+1.3V at pulse width
≤15ns,
which is measured at V
CC
.
*2 : -1.3V at pulse width
≤15ns,
which is measured at V
SS
.
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
Symbol
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I
CC7
I
CCS
I
I(L)
I
O(L)
V
OH
V
OL
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I
CC7
Speed
-L5
-L6
Don′t care
-L5
-L6
-L5
-L6
Don′t care
-L5
-L6
Don′t care
Don′t care
Don′t care
Don′t care
KMM332V804BS
Min
-
-
-
-
-
-
-
-
-
-
-
-
-10
-10
2.4
-
Max
244
224
8
244
224
164
144
2.0
244
224
1.6
1.6
10
10
-
0.4
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
: Operating Current * ( RAS, CAS, Address cycling @
t
RC
=min)
: Standby Current ( RAS=CAS=W=V
IH
)
: RAS Only Refresh Current * ( CAS=V
IH
, RAS cycling @
t
RC
=min)
: Fast Page Mode Current * ( RAS=V
IL
, CAS cycling :
t
PC
=min)
: Standby Current ( RAS=CAS=W=V
CC
-0.2V)
: CAS-Before-RAS Refresh Current * ( RAS and CAS cycling @
t
RC
=min)
: Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(V
IH
)=V
CC
-0.2V, Input low voltage(V
IL
)=0.2V, CAS=0.2V)
DQ0-31=Don
′t
care,
t
RC
=31.25us,
t
RAS
=
t
RAS
min~300ns
Iccs : Self Refresh Current ( RAS=CAS=V
IL
, W=OE=A0-A11=V
CC
-0.2V or 0.2V, DQ0-DQ34=V
I(
IL)
: Input Leakage Current (Any input 0
≤V
IN
≤V
CC
+0.3V, all other pins not under test=0V)
I(
OL)
: Output Leakage Current(Data Out is disabled, 0V
≤V
OUT
≤V
CC
)
V
OH
: Output High Voltage Level (I
OH
= -2mA)
V
OL
: Output Low Voltage Level (I
OL
= 2mA)
CC
-0.2V,0.2V
or OPEN
* NOTE : I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
and I
CC3
, address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one Fast page mode cycle time,
t
PC
.