ESAD83M-006R
(30A)
SCHOTTKY BARRIER DIODE
15.5
±0.3
5.5
±0.2
(60V / 30A )
Outline drawings, mm
ø3.2
9.3
±0.3
±0.2
5.5
±0.3
3.2
+0.3
2.3
±0.2
2.1
±0.3
1.6
±0.3
1.1
—0.1
+0.2
20 Min
21.5
±0.3
5.45
±0.2
5.45
±0.2
0.6
+0.2
3.5
±0.2
Features
Insulated package by fully molding
Low V
F
Super high speed switching
High reliability by planer design
1. Gate
2. Drain
3. Source
JEDEC
EIAJ
Connection diagram
Applications
High speed power switching
1
2
3
Maximum ratings and characteristics
Absolute maximum ratings
Item
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Isolating voltage
Average output current
Suege current
Operating junction temperature
Storage temperature
Symbol
V
RRM
V
RSM
V
iso
I
o
I
FSM
T
j
T
stg
tw=500ns, duty=
1/40
Terminals-to-case,
AC. 1min.
Conditions
Ratings
60
60
1500
30*
200
-40 to +150
-40 to +150
Unit
V
V
V
A
A
°C
°C
Square wave, duty=
1/2
Tc=106°C
Sine wave
10ms
*
Average forward current of centertap full wave connection
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Forward voltage drop
Reverse current
Thermal resistance
Symbol
V
FM
I
RRM
R
th(j-c)
Conditions
I
FM
=12.5A
V
R
=V
RRM
Junction to case
Max.
0.58
20
1.7
Unit
V
mA
°C/W
(60V / 30A )
Characteristics
Forward Characteristic (typ.)
100
ESAD83M-006R (30A)
Reverse Characteristic (typ.)
Tj=150 C
10
2
o
Tj=125 C
10
o
(mA)
(A)
Tj=150
Tj=125
Tj=100
1
o
o
10
1
C
Tj=100 C
o
Forward Current
C
C
o
o
Reverse Current
Tj=25
C
10
0
10
-1
Tj=25 C
o
IF
0.1
IR
10
-2
0.01
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
10
-3
0
10
20
30
40
50
60
70
VF
Forward Voltage
(V)
VR
Reverse Voltage
(V)
Forward Power Dissipation
22
20
18
16
Io
Reverse Power Dissipation
14
13
12
DC
360°
VR
(W)
λ
360°
(W)
11
10
9
8
7
6
5
4
3
α
=180
o
14
Square wave
λ
=60
12
10
8
6
4
2
Per 1element
0
0
2
4
6
8
10
12
14
16
Square wave
λ
=120
o
o
o
Sine wave
λ
=180
o
Square wave
λ
=180
DC
WF
PR
Reverse Power Dissipation
Forward Power Dissipation
α
2
1
0
0
5
10
15
20
25
30
35
40
45
50
55
60
65
Io
Average Forward Current
(A)
VR
Reverse Voltage
(V)
Current Derating (Io-Tc)
160
155
150
145
140
130
125
120
115
110
105
100
95
90
85
80
75
70
65
60
0
5
10
15
20
25
30
35
40
45
Square wave
λ
=60
o
Junction Capacitance Characteristic (typ.)
10000
o
C)
Case Temperature
Junction Capacitance
Cj
DC
(
(pF)
Sine wave
λ
=180
o
o
135
1000
Square wave
λ
=180
Square wave
λ
=120
360°
λ
Io
VR=30V
o
Tc
100
1
10
100
Io
Average Output Current
(A)
VR
Reverse Voltage
(V)
λ
:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
(60V / 30A )
Surge Capability
ESAD83M-006R (30A)
1000
Peak Half - Wave Current
I FSM
100
1
(A)
10
Number of Cycles at 50Hz
Transient Thermal Impedance
10
1
Transient Thermal Impedance
(
10
0
o
C/W )
10
-1
10
-3
10
-2
10
-1
10
0
10
1
10
2
t
Time
(sec.)
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