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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ207
P-CHANNEL MOS FET
FOR SWITCHING
DESCRIPTION
The 2SJ207, P-channel vertical type MOS FET, is a switching device
which can be driven by 2.5 V power supply.
As the MOS FET is driven by low voltage and does not require
consideration of driving current, it is suitable for appliances including
VCR cameras and headphone stereos which need power saving.
PACKAGE DRAWING (Unit: mm)
FEATURES
• Directly driven by ICs having a 3 V power supply.
• Not necessary to consider driving current because of its
high input impedance.
• Possible to reduce the number of parts by omitting the bias
resistor.
• Has low on-state resistance
R
DS(on)
= 4.0
Ω
MAX.
R
DS(on)
= 1.5
Ω
MAX.
<R>
V
GS
=
－2.5
V, I
D
=
－30
mA
V
GS
=
－4.0
V, I
D
=
－500
mA
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note 1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
−16
m16
m1.0
m2.0
2.0
150
−55
to +150
V
V
A
A
W
°C
°C
Total Power Dissipation
Channel Temperature
Storage Temperature
Note 2
Notes 1.
PW
≤
10 ms, Duty Cycle
≤
50%
2.
When using ceramic board of 16 cm × 0.7 mm
2
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18278EJ4V0DS00 (4th edition)
(Previous No. TC-2329A)
Date Published July 2006 NS CP(K)
Printed in Japan
1991, 2006
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
Microcontroller MCU
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