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S-LESDA14V2LT3G

Description
Trans Voltage Suppressor Diode, 300W, 12V V(RWM), Unidirectional, 2 Element, Silicon,
CategoryDiscrete semiconductor    diode   
File Size348KB,5 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
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S-LESDA14V2LT3G Overview

Trans Voltage Suppressor Diode, 300W, 12V V(RWM), Unidirectional, 2 Element, Silicon,

S-LESDA14V2LT3G Parametric

Parameter NameAttribute value
MakerLRC
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum breakdown voltage15.8 V
Minimum breakdown voltage14.2 V
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-G3
Maximum non-repetitive peak reverse power dissipation300 W
Number of components2
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
GuidelineAEC-Q101; IEC-61000-4-2
Maximum repetitive peak reverse voltage12 V
surface mountYES
technologyAVALANCHE
Terminal formGULL WING
Terminal locationDUAL

S-LESDA14V2LT3G Preview

LESHAN RADIO COMPANY, LTD.
Dual transil array for ESD protection
General Description
The LESDA5V3LT1G is a dual monolithic voltage
suppressor designed to protect components which
are connected to data and transmission lines against
ESD. It clamps the voltage just above the logic level
supply for positive transients, and to a diode drop
below ground for negative transients. It can also
work as bidirectionnal suppressor by connecting
only pin1 and 2.
LESDA5V3LT1G
S-LESDA5V3LT1G
LESDA6V1LT1G
S-LESDA6V1LT1G
LESDA14V2LT1G
S-LESDA14V2LT1G
LESDA25VLT1G
S-LESDA25VLT1G
3
Applications
Computers
Printers
Communication systems
It is particulary recommended for the RS232 I/O
port protection where the line interface withstands
only with 2kV ESD surges.
1
2
SOT– 23
Features
2 Unidirectional Transil functions
Low leakage current: I
R
max< 20
μA
at VBR
3 00W peak pulse power(8/20μs)
High ESD protection level: up to 25 kV
S- Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change
Requirements; AEC-Q101 Qualified and PPAP Capable.
Benefits
High ESD protection level
up to 25 kV. High integration.
Suitable for high density boards.
O rdering Information
Device
LESDA5V3LT1G,S-LESDA5V3LT1G
LESDA5V3LT3G,S-LESDA5V3LT3G
LESDA6V1LT1G,S-LESDA6V1LT1G
LESDA6V1LT3G,S-LESDA6V1LT3G
LESDA14V2LT1G,S-LESDA14V2LT1G
LESDA14V2LT3G,S-LESDA14V2LT3G
LESDA25VLT1G,S-LESDA25VLT1G
LESDA25VLT3G,S-LESDA25VLT3G
Marking
E53
E53
E61
E61
E14
E14
E25
E25
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
Complies with the following standards
IEC61000-4-2
Level 4
MIL STD 883c - Method 3015-6 Class 3
(Human Body Model)
Absolute Ratings (T
amb
=25
°C )
Symbol
Parameter
Value
Units
P
PP
T
L
T
stg
T
op
T
j
Peak Pulse Power (t
p
= 8/20μs)
Maximum lead temperature for soldering during 10s
Storage Temperature Range
Operating Temperature Range
Maximum junction temperature
Electrostatic discharge
MIL STD 883C -Method 3015-6
IEC61000-4-2 air discharge
IEC61000-4-2 contact discharge
300
260
-55 to +15
-40 to +125
150
25
16
9
W
°C
°C
°C
°C
V
PP
kv
Rev.O 1/5
LESHAN RADIO COMPANY, LTD.
LESDA5V3LT1G,LESDA6V1LT1G,LESDA14V2LT1G,LESDA25VLT1G
S-LESDA5V3LT1G,S-LESDA6V1LT1G,S-LESDA14V2LT1G,S-LESDA25VLT1G
Electrical Parameter
Symbol
V
RM
V
BR
V
CL
I
RM
I
PP
αT
V
F
C
R
d
Parameter
Stand-off voltage
Breakdown
voltage
Clamping
voltage
Leakage
current
Peak
pulse current
Voltage
temperature coefficient
Forward voltage drop
Capacitance
Dynamic
resistance
Electrical Characteristics
Part Numbers
Min.
v
LESDA5V3LT1G
LESDA6V1LT1G
LESDA14V2LT1G
LESDA25VLT1G
V
BR
Max.
v
5.9
7.2
15.8
30
V
RM
v
3
5.25
12
24
I
RM
µA
2
20
5
1
V
F
Max.
v
1.25
1.25
1.25
1.2
I
F
mA
200
200
200
10
R
d
Typ.
(1)
280
350
650
1000
αT
Max.
(2)
10
-4
/°C
5
6
10
10
C
Typ. 0v bias
pF
220
140
90
50
5.3
6.1
14.2
25
1.Square
pulse I
PP
=15A,t
p
=2.5µs
2.△V
BR
=aT*(T
amb
-25°C)*V
BR
(25°C)
Typical Characteristics
Fig1.Peak power dissipation versus
Initial junction temperature
Fig2. Peak pulse power versus exponential
pulse duration(T
j
initial=25°C)
Rev.O 2/5
LESHAN RADIO COMPANY, LTD.
LESDA5V3LT1G,LESDA6V1LT1G,LESDA14V2LT1G,LESDA25VLT1G
S-LESDA5V3LT1G,S-LESDA6V1LT1G,S-LESDA14V2LT1G,S-LESDA25VLT1G
Fig3. Clamping voltage versus peak
pulse current(T
j
initial=25°C,
rectangular Waveform,t
p
=2.5
μ
s)
Fig4. Capacitance versus reverse
Applied voltage
Fig5.Relative variation of leakage current
Versus junction temperature
Application Note
Fig6. Peak forward voltage drop versus
peak forward current
Electrostatic discharge (ESD) is a major cause of failure in electronic systems. Transient Voltage
Suppressors (TVS) are an ideal choice for ESD protection. They are capable of clamping the incoming transient
to a low enough level such that damage to the protected
semiconductor is prevented.
Surface mount TVS arrays offer the best choice for minimal lead inductance. They serve as parallel
protection elements, connected between the signal line to ground. As the transient rises above the operating
voltage of the device, the TVS array becomes a low impedance path diverting the transient current to ground.
The ESDAxxL array is the ideal board evel protection of ESD sensitive semiconductor components.
The tiny SOT23 package allows design flexibility in the design of high density boards where the space
saving is at a premium. This enables to shorten the routing and contributes to hardening againt ESD.
Rev.O 3/5
LESHAN RADIO COMPANY, LTD.
LESDA5V3LT1G,LESDA6V1LT1G,LESDA14V2LT1G,LESDA25VLT1G
S-LESDA5V3LT1G,S-LESDA6V1LT1G,S-LESDA14V2LT1G,S-LESDA25VLT1G
Rev.O 4/5
LESHAN RADIO COMPANY, LTD.
LESDA5V3LT1G,LESDA6V1LT1G,LESDA14V2LT1G,LESDA25VLT1G
S-LESDA5V3LT1G,S-LESDA6V1LT1G,S-LESDA14V2LT1G,S-LESDA25VLT1G
SOT-23
NOTES:
A
L
3
1
V
G
2
B S
DIM
A
B
C
D
G
H
J
K
L
S
V
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
C
D
H
K
J
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 5/5

S-LESDA14V2LT3G Related Products

S-LESDA14V2LT3G S-LESDA14V2LT1G S-LESDA5V3LT3G S-LESDA5V3LT1G S-LESDA6V1LT1G S-LESDA6V1LT3G
Description Trans Voltage Suppressor Diode, 300W, 12V V(RWM), Unidirectional, 2 Element, Silicon, Trans Voltage Suppressor Diode, 300W, 12V V(RWM), Unidirectional, 2 Element, Silicon, Trans Voltage Suppressor Diode, 300W, 3V V(RWM), Unidirectional, 2 Element, Silicon, Trans Voltage Suppressor Diode, 300W, 3V V(RWM), Unidirectional, 2 Element, Silicon, Trans Voltage Suppressor Diode, 300W, 5.25V V(RWM), Unidirectional, 2 Element, Silicon, Trans Voltage Suppressor Diode, 300W, 5.25V V(RWM), Unidirectional, 2 Element, Silicon,
Maker LRC LRC LRC LRC LRC LRC
package instruction R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum breakdown voltage 15.8 V 15.8 V 5.9 V 5.9 V 7.2 V 7.2 V
Minimum breakdown voltage 14.2 V 14.2 V 5.3 V 5.3 V 6.1 V 6.1 V
Configuration COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Maximum non-repetitive peak reverse power dissipation 300 W 300 W 300 W 300 W 300 W 300 W
Number of components 2 2 2 2 2 2
Number of terminals 3 3 3 3 3 3
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
polarity UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
Guideline AEC-Q101; IEC-61000-4-2 AEC-Q101; IEC-61000-4-2 AEC-Q101; IEC-61000-4-2 AEC-Q101; IEC-61000-4-2 AEC-Q101; IEC-61000-4-2 AEC-Q101; IEC-61000-4-2
Maximum repetitive peak reverse voltage 12 V 12 V 3 V 3 V 5.25 V 5.25 V
surface mount YES YES YES YES YES YES
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL

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