IDT8M824S25C datasheet, PDF - EEWORLD Datasheet

IDT8M824S25C: DescriptionSRAM Module, 128KX8, 25ns, CMOS, CDMA32; Categorystorage storage; File Size186KB，6 Pages; ManufacturerIDT (Integrated Device Technology)

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IDT8M824S25C Overview

SRAM Module, 128KX8, 25ns, CMOS, CDMA32

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum access time	25 ns
Other features	TTL COMPATIBLE INPUTS/OUTPUTS
I/O type	COMMON
JESD-30 code	R-CDMA-T32
JESD-609 code	e0
memory density	1048576 bit
Memory IC Type	SRAM MODULE
memory width	8
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128KX8
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP32,.6
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.08 A
Minimum standby current	4.5 V
Maximum slew rate	0.45 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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