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2SD1857G-P-TM3-T

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size131KB,3 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric View All

2SD1857G-P-TM3-T Overview

Small Signal Bipolar Transistor

2SD1857G-P-TM3-T Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
Base Number Matches1
UNISONIC TECHNOLOGIES CO., LTD
2SD1857
POWER TRANSISTOR
FEATURES
NPN EPITAXIAL SILICON TRANSISTOR
* High breakdown voltage.(BV
CEO
=120V)
* Low collector output capacitance.(Typ.20pF at V
CB
=10V)
* High transition frequency.(f
T
=80MHz)
ORDERING INFORMATION
Package
TO-126S
TO-92
TO-92
TO-92
TO-92NL
TO-92NL
TO-251
B: BASE
Pin Assignment
1
2
3
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
Packing
Bulk
Tape Box
Bulk
Tape Reel
Tape Box
Bulk
Tube
Ordering Number
Lead Free
Halogen Free
2SD1857L-x-T6S-K
2SD1857G-x-T6S-K
2SD1857L-x-T92-B
2SD1857G-x-T92-B
2SD1857L-x-T92-K
2SD1857G-x-T92-K
2SD1857L-x- T92-R
2SD1857G-x- T92-R
2SD1857L-x-T9N-B
2SD1857G-x-T9N-B
2SD1857L-x-T9N-K
2SD1857G-x-T9N-K
2SD1857L-x-TM3-T
2SD1857G-x-TM3-T
Note: Pin Assignment: E: EMITTER C: COLLECTOR
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., LTD
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