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2SD1857-P-T92-B

Description
Small Signal Bipolar Transistor, 2A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size32KB,2 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric Compare View All

2SD1857-P-T92-B Overview

Small Signal Bipolar Transistor, 2A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN

2SD1857-P-T92-B Parametric

Parameter NameAttribute value
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-W3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)82
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
Base Number Matches1
UNISONIC TECHNOLOGIES CO., LTD
2SD1857
POWER TRANSISTOR
FEATURES
* High breakdown voltage.(BV
CEO
=120V)
* Low collector output capacitance.(Typ.20pF at V
CB
=10V)
* High transition frequency.(f
T
=80MHz)
NPN SILICON TRANSISTOR
1
TO-92
1
TO-92NL
*Pb-free plating product number: 2SD1857L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
2SD1857-x-T92-B
2SD1857L-x-T92-B
2SD1857-x-T92-K
2SD1857L-x-T92-K
2SD1857-x-T9N-B
2SD1857L-x-T9N-B
2SD1857-x-T9N-K
2SD1857L-x-T9N-K
2SD1857-x-T9N-R
2SD1857L-x-T9N-R
Package
TO-92
TO-92
TO-92NL
TO-92NL
TO-92NL
Pin Assignment
1
2
3
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
Packing
Tape Box
Bulk
Tape Box
Bulk
Tape Reel
2SD1857L-x-T92-B
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Plating
(1) B: Tape Box, K: Bulk, R: Tape Reel
(2) T92: TO-92, T9N: TO-92NL
(3) x: refer to Classification of h
FE
(4) L: Lead Free Plating, Blank: Pb/Sn
12www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 2
QW-R201-057,C

2SD1857-P-T92-B Related Products

2SD1857-P-T92-B 2SD1857-P-T9N-B 2SD1857-R-T92-B 2SD1857-Q-T92-B 2SD1857-Q-T9N-B 2SD1857-R-T9N-B
Description Small Signal Bipolar Transistor, 2A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN Small Signal Bipolar Transistor, 2A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92NL, 3 PIN Small Signal Bipolar Transistor, 2A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN Small Signal Bipolar Transistor, 2A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN Small Signal Bipolar Transistor, 2A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92NL, 3 PIN Small Signal Bipolar Transistor, 2A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92NL, 3 PIN
Parts packaging code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3
Contacts 3 3 3 3 3 3
Reach Compliance Code compli compli unknow compli compli unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 2 A 2 A 2 A 2 A 2 A 2 A
Collector-emitter maximum voltage 120 V 120 V 120 V 120 V 120 V 120 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 82 82 180 120 120 180
JEDEC-95 code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-W3 O-PBCY-W3 O-PBCY-W3 O-PBCY-W3 O-PBCY-W3 O-PBCY-W3
JESD-609 code e0 e0 e0 e0 e0 e0
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN NPN NPN NPN NPN
surface mount NO NO NO NO NO NO
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 80 MHz 80 MHz 80 MHz 80 MHz 80 MHz 80 MHz
Base Number Matches 1 1 1 1 1 1
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