UNISONIC TECHNOLOGIES CO., LTD
2SD1857
POWER TRANSISTOR
FEATURES
NPN EPITAXIAL SILICON TRANSISTOR
* High breakdown voltage.(BV
CEO
=120V)
* Low collector output capacitance.(Typ.20pF at V
CB
=10V)
* High transition frequency.(f
T
=80MHz)
ORDERING INFORMATION
Package
TO-126S
TO-92
TO-92
TO-92
TO-92NL
TO-92NL
TO-251
B: BASE
Pin Assignment
1
2
3
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
Packing
Bulk
Tape Box
Bulk
Tape Reel
Tape Box
Bulk
Tube
Ordering Number
Lead Free
Halogen Free
2SD1857L-x-T6S-K
2SD1857G-x-T6S-K
2SD1857L-x-T92-B
2SD1857G-x-T92-B
2SD1857L-x-T92-K
2SD1857G-x-T92-K
2SD1857L-x- T92-R
2SD1857G-x- T92-R
2SD1857L-x-T9N-B
2SD1857G-x-T9N-B
2SD1857L-x-T9N-K
2SD1857G-x-T9N-K
2SD1857L-x-TM3-T
2SD1857G-x-TM3-T
Note: Pin Assignment: E: EMITTER C: COLLECTOR
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., LTD
1 of 3
QW-R201-057. H
2SD1857
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
TO-126S
TO-92
TO-92 NL
TO-251
SYMBOL
V
CBO
V
CEO
V
EBO
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25°C, unless otherwise specified)
RATINGS
120
120
5
1.4
0.625
0.9
2
2
3
UNIT
V
V
V
Collector Power Dissipation
P
C
W
Collector Current
Collector Current
I
C
I
CP
A
A
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(SAT)
f
T
C
OB
TEST CONDITIONS
MIN
I
C
=50µA
120
I
C
=1mA
120
I
E
=50µA
5
V
CB
=100V
V
EB
=4V
V
CE
=5V, I
C
=0.1A
82
I
C
=/I
B
=1A/0.1A (Note)
V
CE
=5V, I
E
= -0.1A, f=30MHz.
V
CB
=10V, I
E
=0A, f=1MHz (Note)
TYP MAX UNIT
V
V
V
1
µA
1
µA
390
0.4
V
80
MHz
20
pF
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
Note: Measured using pulse current.
CLASSIFICATION OF h
FE
RANK
RANGE
P
82-180
Q
120-270
R
180-390
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R201-057. H
2SD1857
NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
1.0
10mA
1000
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
500
DC Current Fain: h
FE
T
A
=25°C
V
CE
=10V
Collector Current: I
C
(A)
0.8
0.6
0.4
200
100
50
20
10
5
5V
0.2
0
I
B
=0mA
0
1
2
3
4
5
Collector to Emitter Voltage: V
CE
(V)
T
A
=25°C
2
1
0.01 0.02 0.05 0.1 0.2 0.5 1 2
Collector Current,I
C
(A)
5 10
10
Collector Saturation Voltage:
V
CE(SAT)
(V)
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.01 0.02 0.05
0.1 0.2
0.5
1
2
5 10
Collector Current,I
C
(A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R201-057. H
京公网安备 11010802033920号
EEWORLD
