Advanced Technical Information
FMD 15-06KC5
FDM 15-06KC5
I
D25
=
15 A
V
DSS
= 600 V
R
DS(on) max
= 0.165
Ω
CoolMOS
™ 1)
Power MOSFET
with
HiPerDyn ™ FRED
Buck and Boost Topologies
Electrically isolated back surface
2500 V electrical isolation
N-Channel Enhancement Mode
Low R
DSon
, high V
DSS
MOSFET
Ultra low gate charge
3
3
T
ISOPLUS i4
™
D
4
1
2
5
1
4
D
T
FMD
2
E72873
5
isolated back
surface
FDM
Features
• Silicon chip on Direct-Copper-Bond
substrate
- high power dissipation
- isolated mounting surface
- 2500 V electrical isolation
- low drain to tab capacitance (< 40 pF)
• Fast CoolMOS
™ 1)
power MOSFET 4
th
generation
- high blocking capability
- lowest resistance
- avalanche rated for unclamped
inductive switching (UIS)
- low thermal resistance
due to reduced chip thickness
• Enhanced total power density
• HiPerDyn™ FRED
- consisting of series connected diodes
- enhanced dynamic behaviour for
high frequency operation
Applications
• Switched mode power supplies
(SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
Advantages
• Easy assembly:
no screws or isolation foils required
• Space savings
• High power density
• High reliability
MOSFET T
Symbol
V
DSS
V
GS
I
D25
I
D90
E
AS
E
AR
dV/dt
Symbol
T
C
= 25°C
T
C
= 90°C
single pulse
repetitive
I
D
= 7.9 A; T
C
= 25°C
Conditions
T
VJ
= 25°C
Maximum Ratings
600
±
20
15
11
522
0.79
50
V
V
A
A
mJ
mJ
V/ns
MOSFET dV/dt ruggedness V
DS
= 0...480 V
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ.
150
2.5
T
VJ
= 25°C
T
VJ
= 125°C
3
10
100
2000
100
40
9
13
12
5
50
5
tbd
tbd
tbd
1.1
0.35
52
max.
165
3.5
1
mΩ
V
µA
µA
nA
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
K/W
K/W
R
DSon
V
GS(th)
I
DSS
I
GSS
C
iss
C
oss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
rec off
R
thJC
R
thCH
V
GS
= 10 V; I
D
= 12 A
V
DS
= V
GS
; I
D
= 0.79 mA
V
DS
= 600 V; V
GS
= 0 V
V
GS
= ± 20 V; V
DS
= 0 V
V
GS
= 0 V; V
DS
= 100 V
f = 1 MHz
V
GS
= 0 to 10 V; V
DS
= 400 V; I
D
= 12 A
V
GS
= 10 V; V
DS
= 400 V
I
D
= 12 A; R
G
= 3.3
Ω
1)
with heat transfer paste
CoolMOS
™
is a trademark of
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
20090209c
© 2009 IXYS All rights reserved
1-3
Advanced Technical Information
FMD 15-06KC5
FDM 15-06KC5
MOSFET T
Symbol
Source-Drain Diode
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ.
max.
12
0.9
390
7.5
38
1.2
A
V
ns
µC
A
I
S
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0 V
I
F
= 12 A; V
GS
= 0 V
I
F
= 12 A; -di
F
/dt = 100 A/µs; V
R
= 400 V
Diode D (data for series connection)
Symbol
V
RRM
I
F25
I
F90
Symbol
Conditions
T
VJ
= 25°C to 150°C
T
C
= 25°C
T
C
= 90°C
Conditions
Maximum Ratings
600
15
8
V
A
A
Characteristic Values
min.
typ.
max.
2.50
3.00
2.00
2.55
1
0.08
150
3
35
2.4
0.8
V
V
A
A
µA
mA
A
A
ns
K/W
K/W
V
F
I
F
= 15 A
I
F
= 30 A
I
F
= 15 A
I
F
= 30 A
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 45°C
T
VJ
= 25°C
I
R
I
FSM
I
RM
t
rr
R
thJC
R
thJH
V
R
= V
RRM
t = 10 ms (50 Hz), sine;
I
F
= 20 A; V
R
= 100 V;
-di
F
/dt = 200 A/µs
with heat transfer paste
Component
Symbol
T
VJ
T
stg
V
ISOL
F
C
Symbol
Conditions
operating
storage
I
ISOL
< 1 mA; 50/60 Hz
mounting force with clip
Conditions
Maximum Ratings
-55...+150
-55...+125
2500
20...120
°C
°C
V~
N
Characteristic Values
min.
typ.
40
max.
C
P
d
S
, d
A
d
S
, d
A
Weight
coupling capacity between shorted pins
and mounting tab in the case
pF
mm
mm
pin - pin
pin - backside metal
1.7
5.5
9
g
IXYS reserves the right to change limits, test conditions and dimensions.
20090209c
© 2009 IXYS All rights reserved
2-3
Advanced Technical Information
FMD 15-06KC5
FDM 15-06KC5
ISOPLUS i4
TM
Outline
IXYS reserves the right to change limits, test conditions and dimensions.
20090209c
© 2009 IXYS All rights reserved
3-3
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