20 A, 600 V, N-CHANNEL IGBT
| Parameter Name | Attribute value |
| Maximum collector current | 20 A |
| Maximum Collector-Emitter Voltage | 600 V |
| Number of terminals | 25 |
| Rated off time | 320 ns |
| Processing package description | 25PM-AA, 25 PIN |
| EU RoHS regulations | Yes |
| state | Active |
| Shell connection | ISOLATED |
| structure | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR |
| jesd_30_code | R-XUFM-P25 |
| jesd_609_code | e3 |
| moisture_sensitivity_level | NOT APPLICABLE |
| Number of components | 6 |
| Packaging Materials | UNSPECIFIED |
| packaging shape | RECTANGULAR |
| Package Size | FLANGE MOUNT |
| eak_reflow_temperature__cel_ | NOT SPECIFIED |
| larity_channel_type | N-CHANNEL |
| qualification_status | COMMERCIAL |
| surface mount | NO |
| terminal coating | TIN |
| Terminal form | PIN/PEG |
| Terminal location | UPPER |
| ime_peak_reflow_temperature_max__s_ | NOT SPECIFIED |
| transistor applications | POWER CONTROL |
| Transistor component materials | SILICON |
| Rated on time | 170 ns |
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