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FMS6G20US60S

Description
20 A, 600 V, N-CHANNEL IGBT
CategoryDiscrete semiconductor    The transistor   
File Size30KB,2 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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FMS6G20US60S Overview

20 A, 600 V, N-CHANNEL IGBT

FMS6G20US60S Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
package instructionFLANGE MOUNT, R-XUFM-P25
Contacts25
Reach Compliance Codecompliant
Shell connectionISOLATED
Maximum collector current (IC)20 A
Collector-emitter maximum voltage600 V
ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND SINGLE PHASE DIODE BRIDGE
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-P25
Number of components6
Number of terminals25
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)89 W
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)320 ns
Nominal on time (ton)170 ns
VCEsat-Max2.7 V
Base Number Matches1

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