Advance Technical Information
TrenchT2
TM
HiperFET
N-Channel Power
MOSFET
FMM150-0075X2F
3
3
5
5
4
4
V
DSS
I
D25
T1
R
DS(on)
t
rr(typ)
=
=
≤
=
75V
120A
5.8mΩ
Ω
66ns
Phase Leg Topology
1
1
2
2
T2
ISOPLUS i4-Pak
TM
Symbol
T
J
T
JM
T
stg
V
ISOL
T
L
T
SOLD
F
C
Test Conditions
Maximum Ratings
-55 ... +175
175
-55 ... +175
°C
°C
°C
~V
°C
°C
N/lb.
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
- UL Recognized Package
- Isolated Mounting Surface
- 2500V Electrical Isolation
Avalanche Rated
Low Q
G
Low Drain-to-Tab Capacitance
Low Package Inductance
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
DC-DC Converters
Battery Chargers
Switched-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
1
Isolated Tab
50/60H
Z
, RMS, t = 1min, Leads-to-Tab
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
2500
300
260
20..120 / 4.5..27
5
Features
Symbol
V
DSS
V
DGR
V
GSM
I
D25
I
DM
I
A
E
AS
dV/dt
P
D
Test Conditions
T
J
= 25°C to 175°C
T
J
= 25°C to 175°C, R
GS
= 1MΩ
Transient
T
C
= 25°C
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
175°C
T
C
= 25°C
Maximum Ratings
75
75
±
30
120
500
115
850
20
170
V
V
V
A
A
A
mJ
V/ns
W
Symbol
C
P
d
S
,d
A
d
S
,d
A
Weight
Test Conditions
Coupling Capacitance Between Shorted
Pins and Mounting Tab in the Case
Pin - Pin
Pin - Backside Metal
Characteristic Values
Min.
Typ.
Max.
40
1.7
5.5
9
pF
mm
mm
g
© 2009 IXYS CORPORATION, All Rights Reserved
DS100186(08/09)
FMM150-0075X2F
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
I
RM
Q
RM
Test Conditions
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= 75A, V
GS
= 0V, Note 1
I
F
= 115A, -di/dt = 100A/μs
V
R
= 37V, V
GS
= 0V
66
4.4
145
0.15
V
GS
= 10V, V
DS
= 0.5
V
DSS
, I
D
= 100A
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 V
DSS
, I
D
= 115A
R
G
= 2Ω (External)
V
GS
= 0V, V
DS
= 25 V, f = 1 MHz
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 250μA
V
GS
=
±20
V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
V
GS
= 10V, I
D
= 100A, Note 1
V
DS
= 10V, I
D
= 60A, Note 1
50
83
10.5
1165
125
23
18
33
15
178
37
55
T
J
= 150°C
Characteristic Values
Min.
Typ.
Max.
75
2.0
4.0
±
200
V
V
nA
ISOPLUS i4-Pak
TM
Outline
25
μA
250
μA
5.8 mΩ
S
nF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.88
°C/W
°C/W
Ref: IXYS CO 0077 R0
Characteristic Values
T
J
= 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
230
900
1.5
A
A
V
ns
A
nC
Note 1. Pulse test, t
≤
300μs, duty cycle, d
≤
2 %.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
FMM150-0075X2F
Fig. 1. Output Characteristics
@ T
J
= 25ºC
160
140
120
V
GS
= 15V
10V
8V
7V
6V
360
320
280
240
V
GS
= 15V
10V
8V
Fig. 2. Extended Output Characteristics
@ T
J
= 25ºC
7V
I
D
- Amperes
I
D
- Amperes
100
80
60
40
20
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
200
6V
160
120
80
5V
5V
4V
40
0
0.8
0.9
1.0
0
1
2
4V
3
4
5
6
7
8
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics
@ T
J
= 150ºC
160
140
120
V
GS
= 15V
10V
8V
7V
6V
2.2
2.0
1.8
Fig. 4. R
DS(on)
Normalized to I
D
= 75A Value vs.
Junction Temperature
V
GS
= 10V
R
DS(on)
- Normalized
I
D
- Amperes
100
80
60
40
20
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.6
1.4
1.2
1.0
0.8
0.6
I
D
= 150A
I
D
= 75A
5V
4V
3V
1.4
1.6
1.8
2.0
-50
-25
0
25
50
75
100
125
150
175
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 75A Value
vs. Drain Current
2.4
2.2
2.0
T
J
= 175ºC
V
GS
= 10V
15V
- - - -
140
120
100
Fig. 6. Drain Current vs. Case Temperature
R
DS(on)
- Normalized
I
D
- Amperes
T
J
= 25ºC
1.8
1.6
1.4
1.2
1.0
0.8
0
50
100
150
200
250
300
350
80
60
40
20
0
-50
-25
0
25
50
75
100
125
150
175
I
D
- Amperes
T
C
- Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved
FMM150-0075X2F
Fig. 7. Input Admittance
160
140
120
100
80
60
40
20
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
T
J
= 150ºC
25ºC
- 40ºC
140
120
100
T
J
= - 40ºC
Fig. 8. Transconductance
g
f s
- Siemens
25ºC
150ºC
I
D
- Amperes
80
60
40
20
0
0
20
40
60
80
100
120
140
160
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
300
10
9
250
8
7
V
DS
= 38V
I
D
= 100A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
200
V
GS
- Volts
T
J
= 25ºC
1.0
1.2
1.4
1.6
1.8
6
5
4
3
2
1
150
T
J
= 150ºC
100
50
0
0.2
0.4
0.6
0.8
0
0
20
40
60
80
100
120
140
160
180
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
100,000
1000.0
Fig. 12. Forward-Bias Safe Operating Area
R
DS(on)
Limit
25µs
100µs
f
= 1 MHz
Capacitance - PicoFarads
Ciss
10,000
100.0
I
D
- Amperes
10.0
1ms
Coss
1,000
10ms
1.0
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
DC
100ms
Crss
100
0
5
10
15
20
25
30
35
40
0.1
1
10
100
V
DS
- Volts
V
DS
- Volts
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: FMM150-0075X2F(68)8-28-09
FMM150-0075X2F
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
30
R
G
= 2Ω , V
GS
= 10V
V
DS
= 38V
25
20
22
R
G
= 2Ω , V
GS
= 10V
V
DS
= 38V
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
t
r
- Nanoseconds
t
r
- Nanoseconds
20
I
D
= 230A
18
T
J
= 25ºC
16
15
I
D
= 115A
14
10
12
T
J
= 125ºC
5
25
35
45
55
65
75
85
95
105
115
125
10
110
120
130
140
150
160
170
180
190
200
210
220
230
T
J
- Degrees Centigrade
I
D
- Amperes
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
50
45
40
55
30
28
26
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
65
50
t
r
V
DS
= 38V
t
d(on)
- - - -
I
D
= 230A, 115A
t
f
V
DS
= 38V
t
d(off)
- - - -
60
55
T
J
= 125ºC, V
GS
= 10V
45
R
G
= 2Ω, V
GS
= 10V
t
d(off)
- Nanoseconds
t
r
- Nanoseconds
35
30
25
20
15
10
5
2
4
6
8
10
12
14
16
40
35
30
25
20
15
10
t
f
- Nanoseconds
24
22
20
18
16
14
12
10
25
35
45
55
65
75
85
95
105
115
I
D
= 230A
I
D
= 115A
50
45
40
35
30
25
20
15
125
t
d(on)
- Nanoseconds
R
G
- Ohms
T
J
- Degrees Centigrade
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
26
24
22
60
280
240
200
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
280
t
f
V
DS
= 38V
t
d(off)
- - - -
R
G
= 2Ω, V
GS
= 10V
55
50
T
J
= 125ºC
45
40
35
30
T
J
= 25ºC
25
20
230
t
f
V
DS
= 38V
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
240
t
d(off)
- Nanoseconds
200
160
t
d(off)
- Nanoseconds
t
f
- Nanoseconds
20
18
16
14
12
10
110
t
f
- Nanoseconds
160
I
D
= 115A
120
80
40
I
0
2
4
6
8
10
12
14
16
D
120
80
40
= 230A
0
120
130
140
150
160
170
180
190
200
210
220
I
D
- Amperes
R
G
- Ohms
© 2009 IXYS CORPORATION, All Rights Reserved
京公网安备 11010802033920号
EEWORLD
