GWM160-0055X1 datasheet, PDF - EEWORLD Datasheet

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GWM160-0055X1: DescriptionThree phase full Bridge with Trench MOSFETs in DCB isolated high current package; File Size287KB，7 Pages; ManufacturerIXYS ( Littelfuse ); Websitehttp://www.ixys.com/

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GWM160-0055X1 Overview

Three phase full Bridge with Trench MOSFETs in DCB isolated high current package

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GWM 160-0055X1

Three phase full Bridge

with Trench MOSFETs

in DCB isolated high current package

L+

L-

DSS

= 55 V

= 150 A

D25

DSon typ.

= 2.7 mW

Straight leads

Surface Mount Device

MOSFETs

Symbol

DSS

D25

D90

F25

F90

Symbol

= 25°C

= 90°C

= 25°C (diode)

= 90°C (diode)

Conditions

= 25°C to 150°C

Maximum Ratings

150

115

120

Applications

AC drives

• in automobiles

- electric power steering

- starter generator

• in industrial vehicles

- propulsion drives

- fork lift drives

• in battery supplied equipment

Features

• MOSFETs in trench technology:

- low RDSon

- optimized intrinsic reverse diode

• package:

- high level of integration

- high current capability 300 A max.

- aux. terminals for MOSFET control

- terminals for soldering or welding

connections

- isolated DCB ceramic base plate

with optimized heat transfer

• Space and weight savings

Package options

• 2 lead forms available

- straight leads (SL)

- SMD lead version (SMD)

Characteristic Values

= 25°C, unless otherwise specified)

min.

typ.

2.7

4.5

2.5

= 25°C

= 125°C

0.1

0.2

105

tbd

140

125

550

120

0.17

0.60

0.004

1.3

1.0

1.6

max.

3.3

4.5

µA

K/W

DSon 1)

GS(th)

DSS

GSS

d(on)

d(off)

off

recoff

thJC

thJH

on chip level at

= 10 V; I

= 100 A

= 20 V; I

= 1 mA

= V

DSS

; V

= 0 V

20 V; V

= 0 V

= 25°C

= 125°C

= 10 V; V

= 12 V; I

= 160 A

inductive load

= 10 V; V

= 24 V

= 100 A; R

= 39

Ω;

= 125°C

with heat transfer paste (IXYS test setup)

= I

·(R

DS(on)

+ 2R

Pin to Chip

)

IXYS reserves the right to change limits, test conditions and dimensions.

20110307i

1-6

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