KSA643
PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
•
Complement to KSD261
•
Collector Dissipation: P
C
=500mW
TO-92
ABSOLUTE MAXIMUM RATINGS (T
A
=25°C)
°
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (pulse)*
Collector Dissipation
Junction Temperature
Storage Temperature
* PW≤10ms, Duty cycle≤50%
1. Emitter 2. Base 3. Collector
Symbol
V
CBO
V
CEO
V
EBO
I
C
(DC)
I
C
(Pulse)*
P
C
T
J
T
STG
Rating
-40
-20
-5
-500
-700
500
150
-55 ~ 150
Unit
V
V
V
mA
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (T
A
=25°C)
°
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
* Pulse Test: PW≤350µs, Duty cycle≤2%
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
Test Conditions
I
C
= -100µA, I
E
=0
I
C
= -10mA, I
B
=0
I
E
= -10µA, I
C
=0
V
CB
= -25V, I
E
=0
V
EB
= -3V, l
C
=0
V
CE
= -1V, I
C
= -100mA *
IC= -500mA, IB= -50mA*
IC= -500mA, IB= -50mA*
Min
-40
-20
-5
-200
-200
400
- 0.4
-1.3
Typ
Max
Unit
V
V
V
nA
nA
V
V
40
-0.3
-1.0
h
FE
CLASSIFICATION
Classification
h
FE
R
40-80
O
70-140
Y
120-240
G
200-400
Rev. B
©
1999 Fairchild Semiconductor Corporation
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E
2
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®
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HiSeC™
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effectiveness.
reasonably expected to result in significant injury to the
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PRODUCT STATUS DEFINITIONS
Definition of Terms
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Advance Information
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Formative or
In Design
Definition
This datasheet contains the design specifications for
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This datasheet contains preliminary data, and
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