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KSC3953
KSC3953
CRT Display Video Output
• High Current Gain Bandwidth Product : f
T
=400MHz(Typ.)
• High Collector-Emitter Voltage : V
CEO
=120V
• Low Reverse Transfer Capacitance : C
re
=1.7pF(Typ.)
1
TO-126
2.Collector
3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
a
=25°C)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
120
120
3
200
400
1.3
8
150
- 55 ~ 150
Units
V
V
V
mA
mA
W
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CBO
BV
EBO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
C
re
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Test Condition
I
C
= 10µA, I
B
= 0
I
C
= 1mA, R
BE
=
∞
I
E
= 100µA, I
C
= 0
V
CB
= 80V, I
E
= 0
V
EB
= 2V, I
C
= 0
V
CE
= 10V, I
C
= 10mA
V
CE
= 10V, I
C
= 100mA
I
C
= 30mA, I
B
= 3mA
I
C
= 30mA, I
B
= 3mA
V
CE
= 10V,I
C
= 50mA
V
CB
= 30V, f = 1MHz
V
CB
= 30V, f = 1MHz
400
2.1
1.7
40
20
Min.
120
120
3
0.1
1.0
120
1.0
1.0
V
V
MHz
pF
pF
Typ.
Max.
Units
V
V
V
µA
µA
h
FE
Classificntion
Classification
h
FE1
C
40 ~ 80
D
60 ~ 120
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC3953
Typical Characteristics
100
1000
I
B
= 0.9mA
I
B
= 0.8mA
V
CE
= 10V
I
C
[mA], COLLECTOR CURRENT
80
I
B
= 0.7mA
I
B
= 0.6mA
h
FE
, DC CURRENT GAIN
100
60
I
B
= 0.5mA
I
B
= 0.4mA
40
I
B
= 0.3mA
I
B
= 0.2mA
20
10
I
B
= 0.1mA
0
0
4
8
12
I
B
= 0
16
20
1
1
10
100
1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
120
V
CE
(sat)[V], SATURATION VOLTAGE
I
C
= 10 I
B
V
CE
= 10V
I
C
[mA], COLLECTOR CURRENT
100
1
80
60
0.1
40
20
0.01
1
10
100
1000
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
100
f = 1MHz
I
E
= 0
f = 1MHz
I
E
= 0
C
ob
[pF], CAPACITANCE
10
C
re
[pF], CAPACITANCE
1
10
100
10
1
1
0.1
0.1
0.1
0.1
1
10
100
V
CB
[V], COLLECTOR-BASE VOLTAGE
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
Figure 6. Reverse Capacitance
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC3953
Typical Characteristics
(Continued)
f
T
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
1000
1000
V
CE
= 10V
I
C
MAX. (Pulse)
1m
ms
10
I
C
[mA], COLLECTOR CURRENT
I
C
MAX. (DC)
T
C
= 25 C
100
o
s
100
10
1
10
100
1
1
10
100
1000
I
C
[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Current Gain Bandwidth Product
Figure 8. Safe Operating Area
10
P
C
[W], POWER DISSIPATION
8
6
T
c
4
2
T
a
0
0
25
50
o
75
100
125
150
175
T[ C], TEMPERATURE
Figure 9. Power Derating
©2000 Fairchild Semiconductor International
V
CEO
MAX.
10
Rev. A, February 2000
KSC3953
Package Demensions
TO-126
±0.10
3.90
8.00
±0.30
3.25
±0.20
14.20MAX
ø3.20
±0.10
11.00
±0.20
(1.00)
0.75
±0.10
1.60
±0.10
0.75
±0.10
±0.30
(0.50)
1.75
±0.20
#1
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
13.06
16.10
±0.20
0.50
–0.05
+0.10
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
FPGA/CPLD
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