KTA1659O datasheet, PDF - EEWORLD Datasheet

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KTA1659O: DescriptionPower Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220IS, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size456KB，3 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KTA1659O Overview

Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220IS, 3 PIN

KTA1659O Parametric

Parameter Name	Attribute value
Maker	KEC
Parts packaging code	TO-220AB
package instruction	TO-220IS, 3 PIN
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	1.5 A
Collector-emitter maximum voltage	160 V
Configuration	SINGLE
Minimum DC current gain (hFE)	70
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	PNP
Maximum power dissipation(Abs)	20 W
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

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SEMICONDUCTOR

TECHNICAL DATA

HIGH VOLTAGE APPLICATION.

FEATURES

High Transition Frequency : f

=100MHz(Typ.).

Complementary to KTC4370/A.

KTA1659/A

EPITAXIAL PLANAR PNP TRANSISTOR

DIM

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base

Voltage

Collector-Emitter

Voltage

Emitter-Base Voltage

Collector Current

Base Current

)

SYMBOL

CBO

RATING

-160

-180

UNIT

KTA1659

KTA1659A

KTA1659

CEO

KTA1659A

EBO

stg

MILLIMETERS

10.0 + 0.3

_ 0.3

15.0 +

2.70 + 0.3

0.76+0.09/-0.05

Φ3.2

+ 0.2

3.0 + 0.3

12.0 + 0.3

0.5+0.1/-0.05

13.6 + 0.5

3.7 + 0.2

1.2+0.25/-0.1

1.5+0.25/-0.1

2.54 + 0.1

6.8 + 0.1

4.5 + 0.2

2.6 + 0.2

0.5 Typ

-160

-180

-5

-1.5

-0.15

150

-55 150

1. BASE

2. COLLECTOR

3. EMITTER

Collector Power Dissipation (Tc=25 )

Junction Temperature

Storage Temperature Range

TO-220IS

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

Collector-Emitter

Breakdown Voltage

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

Transition Frequency

Collector Output Capacitance

Note : h

Classification

O:70~140,

KTA1659

(BR)CEO

KTA1659A

(Note)

CE(sat)

Y:120~240

=-5V, I

=-100mA

=-500mA, I

=-50mA

=-5V, I

=-500mA

=-10V, I

=-100mA

=-10V, I

=0, f=1MHz

=-10mA, I

-180

100

240

-1.5

-1.0

MHz

SYMBOL

CBO

EBO

TEST CONDITION

=-160V, I

=-5V, I

MIN.

-160

TYP.

MAX.

-1.0

UNIT

2007. 5. 21

Revision No : 1

1/3

KTA1659O Related Products

	KTA1659O	KTA1659A-O	KTA1659A-Y-U/PF	KTA1659Y	KTA1659A-Y
Description	Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220IS, 3 PIN	Power Bipolar Transistor, 1.5A I(C), 180V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220IS, 3 PIN	Rated power: 20W Collector current Ic: 1.5A Collector-emitter breakdown voltage Vce: 180V Transistor type: PNP PNP, Vceo=-180V, Ic=-1.5A, hfe=120~240	Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220IS, 3 PIN	Power Bipolar Transistor, 1.5A I(C), 180V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220IS, 3 PIN
Maker	KEC	KEC	-	KEC	KEC
Parts packaging code	TO-220AB	TO-220AB	-	TO-220AB	TO-220AB
package instruction	TO-220IS, 3 PIN	TO-220IS, 3 PIN	-	TO-220IS, 3 PIN	TO-220IS, 3 PIN
Contacts	3	3	-	3	3
Reach Compliance Code	unknown	unknown	-	unknown	unknown
ECCN code	EAR99	EAR99	-	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	-	ISOLATED	ISOLATED
Maximum collector current (IC)	1.5 A	1.5 A	-	1.5 A	1.5 A
Collector-emitter maximum voltage	160 V	180 V	-	160 V	180 V
Configuration	SINGLE	SINGLE	-	SINGLE	SINGLE
Minimum DC current gain (hFE)	70	70	-	120	120
JEDEC-95 code	TO-220AB	TO-220AB	-	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3	-	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	-	1	1
Number of terminals	3	3	-	3	3
Maximum operating temperature	150 °C	150 °C	-	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	-	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	PNP	PNP	-	PNP	PNP
Maximum power dissipation(Abs)	20 W	20 W	-	20 W	20 W
surface mount	NO	NO	-	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	-	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	-	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON	-	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	-	100 MHz	100 MHz

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