D2
PA
K
BUK7660-100A
N-channel TrenchMOS standard level FET
Rev. 02 — 7 February 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
V
GS
= 10 V; I
D
= 15 A;
T
j
= 175 °C; see
Figure 12;
see
Figure 13
V
GS
= 10 V; I
D
= 15 A;
T
j
= 25 °C; see
Figure 12;
see
Figure 13
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source avalanche
energy
I
D
= 20 A; V
sup
≤
100 V;
R
GS
= 50
Ω;
V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
-
-
110
mJ
Min
-
-
-
-
Typ
-
-
-
-
Max Unit
100
26
106
150
V
A
W
mΩ
Static characteristics
-
51
60
mΩ
NXP Semiconductors
BUK7660-100A
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base; connected to drain
mbb076
Simplified outline
mb
Graphic symbol
D
G
S
2
1
3
SOT404 (D2PAK)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK7660-100A
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Type number
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1;
see
Figure 3
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
T
mb
= 25 °C
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
I
D
= 20 A; V
sup
≤
100 V; R
GS
= 50
Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
T
mb
= 25 °C; pulsed; t
p
≤
10 µs;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
Max
100
100
20
26
19
106
106
175
175
26
106
110
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
Avalanche ruggedness
BUK7660-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 7 February 2011
2 of 13
NXP Semiconductors
BUK7660-100A
N-channel TrenchMOS standard level FET
120
I
der
(%)
80
03aa24
120
P
der
(%)
80
03na19
40
40
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
10
3
I
D
(A)
10
2
R
DSon
= V
DS
/ I
D
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
03nd04
t
p
= 10
μs
10
δ
=
t
p
T
100
μs
D.C.
1 ms
10 ms
100 ms
t
p
t
T
P
1
10
−1
1
10
10
2
V
DS
(V)
10
3
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7660-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 7 February 2011
3 of 13
NXP Semiconductors
BUK7660-100A
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction
to mounting base
thermal resistance from junction
to ambient
Conditions
see
Figure 4
mounted on printed-circuit board ;
minimum footprint
Min
-
-
Typ
-
50
Max
1.4
-
Unit
K/W
K/W
10
Z
th(j-mb)
(K/W)
03nd05
1
δ
= 0.5
0.2
0.1
10
−1
P
0.05
0.02
Single Shot
t
p
T
δ
=
t
p
T
t
10
−2
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
t
p
(s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7660-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 7 February 2011
4 of 13
NXP Semiconductors
BUK7660-100A
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
V
GS(th)
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 11
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
see
Figure 11
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 11
I
DSS
I
GSS
R
DSon
drain leakage current
gate leakage current
drain-source on-state
resistance
V
DS
= 100 V; V
GS
= 0 V; T
j
= 175 °C
V
DS
= 100 V; V
GS
= 0 V; T
j
= 25 °C
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 10 V; I
D
= 15 A; T
j
= 175 °C;
see
Figure 12;
see
Figure 13
V
GS
= 10 V; I
D
= 15 A; T
j
= 25 °C;
see
Figure 12;
see
Figure 13
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
D
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
from upper edge of drain mounting
base to centre of die ; T
j
= 25 °C
from drain lead 6 mm from package to
centre of die ; T
j
= 25 °C
L
S
internal source inductance
from source lead to source bond pad ;
T
j
= 25 °C
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 15
I
S
= 20 A; dI
S
/dt = -100 A/µs;
V
GS
= -10 V; V
DS
= 30 V; T
j
= 25 °C
V
DS
= 30 V; R
L
= 1.2
Ω;
V
GS
= 10 V;
R
G(ext)
= 10
Ω;
T
j
= 25 °C
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 14
-
-
-
-
-
-
-
-
-
-
1030
143
90
10
45
31
20
2.5
4.5
7.5
1377
171
120
-
-
-
-
-
-
-
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
Min
100
89
2
-
1
-
-
-
-
-
-
Typ
-
-
3
-
-
-
0.05
2
2
-
51
Max
-
-
4
4.4
-
500
10
100
100
150
60
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
Static characteristics
Source-drain diode
V
SD
t
rr
Q
r
source-drain voltage
reverse recovery time
recovered charge
-
-
-
0.85
59
180
1.2
-
-
V
ns
nC
BUK7660-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 7 February 2011
5 of 13
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