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DB102

Description
1 A, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size97KB,3 Pages
ManufacturerHY Electronic
Websitehttp://www.hygroup.com.tw
Environmental Compliance
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DB102 Overview

1 A, SILICON, BRIDGE RECTIFIER DIODE

DB102 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PDIP-T4
Reach Compliance Codeunknow
Minimum breakdown voltage100 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PDIP-T4
Maximum non-repetitive peak forward current30 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage100 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
DB101 thru DB107
GLASS PASSIVATED
BRIDGE RECTIFIERS
FEATURES
Rating to 1000V PRV
Ideal for printed circuit board
Low forward voltage drop,high current capability
Reliable low cost construction utilizing molded plastic
.
REVERSE VOLTAGE
- 50
to
1000
Volts
FORWARD CURRENT
- 1.0
Ampere
DB
.335(8.5)
.307(7.8)
-
~
.346(8.8)
.323(8.2)
+
.256(6.5)
.244(6.2)
technique results in inexpensive product
The plastic material has UL flammability
~
.350(8.9)
.300(7.6)
classification 94V-0
MECHANICAL DATA
Polarit:As marked on Body
Weight:0.02 ounces,0.38 grams
Mounting
position:Any
.022(0.55)
.018(0.45)
.205(5.2)
.195(5.0)
SPACING
.134(3.4)
.124(3.15)
.193(4.9)
.155(3.9)
.059
(1.5)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load (JEDEC Method)
Maximum Forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Bolcking Voltage
I
2
t Rating for Fusing(t<8.3ms)
Typical Junction Capacitance Per Element(Note1)
Typical Thermal Resistance (Note2)
Operating Temperature Range
Storage Temperature Range
@T
J
=25℃
@T
J
=125℃
@T
A
=40℃
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
DB101
50
35
50
DB102
100
70
100
DB103
200
140
200
DB104
400
280
400
1.0
DB105
600
420
600
DB106
800
560
800
DB107
1000
700
1000
UNIT
V
V
V
A
I
FSM
30
A
V
F
I
R
I
2
t
C
J
R
θJA
T
J
T
STG
1.1
10
500
10.4
25
40
-55 to +150
-55 to +150
V
μA
A
2
s
pF
℃/W
Note:1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC
2.Thermal resistance from junction to ambient mounted on P.C.B
with 0.5*0.5"(13*13mm)copper pads.
~ 378 ~

DB102 Related Products

DB102 DB101
Description 1 A, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Is it Rohs certified? conform to conform to
package instruction R-PDIP-T4 R-PDIP-T4
Reach Compliance Code unknow unknow
Minimum breakdown voltage 100 V 50 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 code R-PDIP-T4 R-PDIP-T4
Maximum non-repetitive peak forward current 30 A 30 A
Number of components 4 4
Phase 1 1
Number of terminals 4 4
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C
Maximum output current 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 100 V 50 V
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED

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