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2SC3356A-TP

Description
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size102KB,4 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
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2SC3356A-TP Overview

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC PACKAGE-3

2SC3356A-TP Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.1 A
Collector-based maximum capacity1 pF
Collector-emitter maximum voltage12 V
ConfigurationSINGLE
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)7000 MHz
Base Number Matches1
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
2SC3356
Features
Low noise and high gain
High power gain
Marking Code: 2SC3356=R25
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
NPN Silicon
Epitaxial Transistors
Unit
V
V
V
mA
mW
O
C
O
C
F
Maximum Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Rating
12
20
3.0
100
200
-55 to +150
-55 to +150
SOT-23
A
D
C
C
B
B
E
E
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
I
CBO
I
EBO
Parameter
Collector-Base Cutoff Current
(V
CB
=10Vdc,I
E
=0)
Emitter-Base Cutoff Current
(V
EB
=1.0Vdc, I
C
=0)
Forward Current Transfer ratio
(I
C
=20mAdc, V
CE
=10Vdc)
Gain Bandwidth Product
(V
CE
=10Vdc, I
C
=20mA )
Feed-Back Capacitance
(V
CE
=11Vdc, I
F
=0,f=1.0MHz )
Noise Figure
(V
CE
=10V , I
C
=7.0mA,
f=1.0GHz)
Min
---
---
Typ
---
---
Max
1.0
1.0
Units
uAdc
uAdc
G
H
J
OFF CHARACTERISTICS
K
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
ON CHARACTERISTICS
h
FE
f
T
C
re
NF
50
---
---
---
---
7.0
---
---
300
---
1.0
2.0
---
GHz
pF
dB
DIM
A
B
C
D
E
F
G
H
J
K
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
CLASSIFICATION OF h
FE
RANK
RANGE
A
80-160
B
160-240
C
240-300
.037
.950
.037
.950
.079
2.000
inches
mm
www.mccsemi .com
Revision: 4
1 of 4
2008/01/01

2SC3356A-TP Related Products

2SC3356A-TP 2SC3356-TP 2SC3356C-TP 2SC3356B-TP
Description RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC PACKAGE-3 RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC PACKAGE-3 RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC PACKAGE-3 RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC PACKAGE-3
package instruction PLASTIC PACKAGE-3 SMALL OUTLINE, R-PDSO-G3 PLASTIC PACKAGE-3 PLASTIC PACKAGE-3
Contacts 3 3 3 3
Reach Compliance Code compli unknow compli compli
ECCN code EAR99 EAR99 EAR99 EAR99
Other features LOW NOISE LOW NOISE LOW NOISE LOW NOISE
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A
Collector-based maximum capacity 1 pF 1 pF 1 pF 1 pF
Collector-emitter maximum voltage 12 V 12 V 12 V 12 V
Configuration SINGLE SINGLE SINGLE SINGLE
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN
surface mount YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 7000 MHz 7000 MHz 7000 MHz 7000 MHz
Base Number Matches 1 1 1 1
Is it Rohs certified? conform to - conform to conform to
JESD-609 code e3 - e3 e3
Terminal surface Matte Tin (Sn) - Matte Tin (Sn) Matte Tin (Sn)
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