2SC3356F
Elektronische Bauelemente
NPN Silicon
Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-323
FEATURES
Low noise amplifier at VHF,
UHF and CATV band.
Low Noise and High Gain
High Power Gain
2
Emitter
A
3
L
3
Collector
3
Top View
1
2
C B
1
2
K
E
D
1
MARKING
R
= hFE Coding
Base
F
G
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.20
1.40
0.20
0.40
H
J
REF.
A
B
C
D
E
F
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
-
-
0.650 TYP.
ABSOLUTE MAXIMUM RATINGS
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Total Device Dissipation
Junction and Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
20
12
3
0.1
200
150, -55~150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS
Parameter
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Collector Output Capacitance
(T
A
= 25°C unless otherwise noted)
Symbol
BV
CBO
BV
CEO
I
CBO
I
EBO
h
FE
*
f
T
NF
Min.
20
12
-
50
-
-
Typ.
-
-
-
-
7
-
Max.
-
-
1
1
250
-
2
Unit
V
V
μA
μA
GHz
dB
Test Conditions
I
C
=10μA, I
E
=0
I
C
= 1mA, I
B
=0
V
CB
=10V, I
E
=0
V
EB
=1V, I
C
=0
V
CE
=10V, I
C
= 20mA
V
CE
=10V, I
C
= 20mA
V
CE
=10V, I
C
= 7mA, f = 1GHz
*pulse test: pulse width
≤
350μs, Duty cycle
≤
2%
CLASSIFICATION OF h
FE
Rank
Coding
Range
Marking
Q
23
50 - 100
R23
R
24
80 - 160
R24
S
25
125 – 250
R25
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-June-2002 Rev. A
Page 1 of 2
2SC3356F
Elektronische Bauelemente
NPN Silicon
Plastic Encapsulated Transistor
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-June-2002 Rev. A
Page 2 of 2
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