2SC3356
Elektronische Bauelemente
NPN Silicon
Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
SOT-23
A
3
3
Low Noise Amplifier at VHF, UHF and CATV band
Low Noise and High Gain
High Power Gain
Collector
L
Top View
1
2
C B
1
2
K
E
D
Base
F
G
REF.
A
B
C
D
E
F
H
J
Millimeter
Min.
Max.
0.10 REF.
0.55 REF.
0.08
0.15
0.5 REF.
0.95 TYP.
Emitter
Millimeter
Min.
Max.
2.80
3.00
2.25
2.55
1.20
1.40
0.90
1.15
1.80
2.00
0.30
0.50
REF.
G
H
J
K
L
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
Pc
T
J
, T
STG
RATINGS
20
12
3
0.1
0.25
+150, -55 ~ +150
UNIT
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Transition Frequency
Noise Figure
SYMBOL
V
(BR)CBO
V
(BR)CEO
I
CBO
I
EBO
h
FE*
f
T
NF
MIN.
20
12
-
-
50
-
-
TYP.
-
-
-
-
-
7
-
MAX.
-
-
1
1
250
-
2
UNIT
V
V
μA
μA
TEST CONDITIONS
I
C
=10μA, I
E
=0
I
C
= 1mA, I
B
=0
V
CB
=10V, I
E
=0
V
EB
= 1V, I
C
=0
V
CE
= 10V, I
C
=20mA
GHz
dB
V
CE
=10V, I
C
= 20mA,
V
CE
=10V, I
C
= 7mA, f = 1GHz
*Pulse
Test: Pulse Width
≦
350μs, Duty Cycle
≦
2%
CLASSIFICATION OF h
FE
MARKING
RANK
RANGE
R23
Q
50-100
R24
R
80-160
R25
S
125-250
16-Oct-2009 Rev. B
Page 1 of 2
2SC3356
Elektronische Bauelemente
NPN Silicon
Plastic Encapsulated Transistor
TYPICAL CHARACTERISTICS (T
A
= 25°C)
16-Oct-2009 Rev. B
Page 2 of 2
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