2SC1623-TP datasheet, PDF - EEWORLD Datasheet

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2SC1623-TP: DescriptionTRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size347KB，2 Pages; ManufacturerMicro Commercial Components (MCC); Environmental Compliance

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2SC1623-TP Overview

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3, BIP General Purpose Small Signal

2SC1623-TP Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compli
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	135
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.2 W
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
VCEsat-Max	0.3 V
Base Number Matches	1

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MCC

TM

Micro Commercial Components

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

2SC1623

Features

•

High DC Current Gain: h

FE

=200 TYP.(V

CE

=6.0V, I

C

=1.0mA)

High voltage: V

CEO

=50V

Case Material: Molded Plastic.

Classification Rating 94V-0

UL Flammability

NPN Silicon

Epitaxial Transistors

Unit

V

mA

mW

O

C

O

C

F

Maximum Ratings

Symbol

V

CEO

V

CBO

V

EBO

I

C

P

C

T

J

T

STG

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Collector power dissipation

Junction Temperature

Storage Temperature

Rating

50

60

5.0

100

200

-55 to +150

SOT-23

A

D

C

B

E

Electrical Characteristics @ 25

O

C Unless Otherwise Specified

Symbol

Parameter

Collector Cutoff Current

(V

CB

=60Vdc,I

E

=0)

Emitter Cutoff Current

(V

EB

=5.0Vdc, I

C

=0)

DC Current Gain*

(I

C

=1.0mAdc, V

CE

=6.0Vdc)

Collector Saturation Voltage*

(I

C

=100mAdc, I

B

=10mAdc)

Base Saturation Voltage*

(I

C

=100mAdc,I

B

=10mAdc)

Base Emitter Voltage*

(V

CE

=6.0Vdc, I

C

=1.0mAdc)

Collector Capacitance

(V

CB

=6.0Vdc, I

E

=0, f=1.0MHz)

Gain Bandwidth product

(V

CE

=6.0Vdc, I

E

=10mAdc)

Min

---

Typ

---

Max

0.1

Units

G

H

J

OFF CHARACTERISTICS

I

CBO

I

EBO

uAdc

K

uAdc

DIM

A

B

C

D

E

F

G

H

J

K

INCHES

MIN

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

DIMENSIONS

MM

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

.085

.37

ON CHARACTERISTICS

h

F

V

CE(sat)

V

BE(SAT)

V

BE

C

ob

f

T

90

---

0.55

---

200

0.15

0.86

0.62

3.0

250

600

0.3

1.0

0.65

---

Vdc

pF

MHz

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

Suggested Solder

Pad Layout

.031

.800

.035

.900

.079

2.000

inches

mm

h

FE

CLASSIFICATION

Marking

L4

L5

h

FE

90-180

135-270

* Pulse Test PW<350us, duty cycle<2%

L6

200-400

L7

300-600

.037

.950

.037

.950

www.mccsemi.com

Revision: 3

1 of 2

2006/05/10

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