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1.
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“Standard”:
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
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(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
SILICON TRANSISTOR
2SC1623
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
FEATURES
•
High DC Current Gain:
h
FE
= 200 TYP. (V
CE
= 6.0 V, I
C
= 1.0 mA)
•
High Voltage: V
CEO
= 50 V
<R>
PACKAGE DRAWING (Unit: mm)
2.8 ± 0.2
0.4
+0.1
–0.05
1.5 TYP.
0.65
–0.15
+0.1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Total Power Dissipation
Junction Temperature
Storage Temperature Range
V
CBO
60
V
V
CEO
50
V
V
EBO
5.0
V
I
C
100
mA
P
T
200
mW
T
j
150
°C
T
stg
−55
to +150
°C
0.95
TYP.
0.95
TYP.
2.9 ± 0.2
2
3
0.3
TYP.
Marking
1.1 to 1.4
1: Emitter
2: Base
3: Collector
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector Saturation Voltage
Base to Saturation Voltage
Base to Emitter voltage
Gain Bandwidth Product
SYMBOL
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE
f
T
C
ob
0.55
90
200
0.15
0.86
0.62
250
3.0
MIN.
TYP.
MAX.
0.1
0.1
600
0.3
1.0
0.65
V
V
V
MHz
pF
UNIT
TEST CONDITIONS
V
CB
= 60 V, I
E
= 0 A
V
EB
= 5.0 V, I
C
= 0 A
V
CE
= 6.0 V, I
C
= 1.0 mA
I
C
= 100 mA, I
B
= 10 mA
I
C
= 100 mA, I
B
= 10 mA
Note
Note
Note
Note
μ
A
μ
A
V
CE
= 6.0 V, I
C
= 1.0 mA
V
CE
= 6.0 V, I
E
=
−10
mA
V
CB
= 6.0 V, I
E
= 0 A, f = 1.0 MHz
<R>
Output Capacitance
Note
Pulsed: PW
≤
350
μ
s, Duty Cycle
≤
2%
h
FE
CLASSIFICATION
Marking
h
FE
L4
90 to 180
L5
135 to 270
L6
200 to 400
L7
300 to 600
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17115EJ5V0DS00 (5th edition)
Date Published November 2005 NS CP(K)
Printed in Japan
0 to 0.1
0.16
+0.1
–0.06
+0.1
1
0.4
–0.05
c
1984
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
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