Polar
TM
Power MOSFET
HiPerFET
TM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AS
dV/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
F
C
Weight
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting torque
Mounting force
TO-264
TO-247
(IXFK)
(IXFX)
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150°C
T
C
= 25°C
IXFK26N100P
IXFX26N100P
V
DSS
I
D25
t
rr
R
DS(on)
= 1000V
= 26A
≤
390mΩ
Ω
≤
300ns
TO-264 (IXFK)
Maximum Ratings
1000
1000
±
30
±
40
26
65
13
1
15
780
-55 ... +150
150
-55 ... +150
300
260
1.13/10
20..120 /4.5..27
10
6
V
V
V
V
A
A
A
J
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
N/lb.
g
g
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
G
D
S
(TAB)
PLUS247 (IXFX)
Features
Fast intrinsic diode
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C unless otherwise specified)
Min. Typ.
Max.
1000
3.5
6.5
±
200
T
J
= 125°C
25
2
390
V
V
nA
μA
mA
mΩ
Advantages
Easy to mount
Space savings
High power density
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 1mA
V
GS
=
±
30V, V
DS
= 0V
V
DS
= V
DSS
V
GS
= 0V
Applications:
Switched-mode and resonant-mode
power supplies
DC-DC Converters
Laser Drivers
AC and DC motor controls
Robotics and servo controls
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
© 2008 IXYS CORPORATION,All rights reserved
DS99853A(4/08)
IXFK26N100P
IXFX26N100P
Symbol
Test Conditions
(T
J
= 25°C unless otherwise specified)
g
fs
C
iss
C
oss
C
rss
R
Gi
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Test Conditions
V
GS
= 0V
Repetitive, pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 13A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
1.2
12
0.15
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Gate input resistance
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1Ω (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 20V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max.
13
22
11.9
690
60
1.50
45
45
72
50
197
76
85
0.16
S
nF
pF
pF
Ω
ns
ns
ns
ns
nC
nC
nC
°C/W
°C/W
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32 20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
TO-264 (IXFK) Outline
Characteristic Values
T
J
= 25°C unless otherwise specified)
Min.
Typ.
Max.
26
104
1.5
300
A
A
V
ns
μC
A
PLUS 247
TM
(IXFX) Outline
Note 1:
Pulse test, t
≤
300μs; duty cycle, d
≤
2%.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
Q
R
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
7,157,338B2
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
IXFK26N100P
IXFX26N100P
Fig. 1. Output Characteristics
@ 25ºC
28
24
20
V
GS
= 10V
9V
70
60
50
Fig. 2. Extended Output Characteristics
@ 25ºC
V
GS
= 10V
I
D
- Amperes
I
D
- Amperes
16
12
8
4
0
0
1
2
3
4
5
6
7
8
9
8V
40
30
20
10
9V
8V
7V
7V
0
0
5
10
15
20
25
30
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics
@ 125ºC
28
24
20
V
GS
= 10V
9V
3.0
2.8
2.6
2.4
Fig. 4. R
DS(on)
Normalized to I
D
= 13A Value
vs. Junction Temperature
V
GS
= 10V
R
DS(on)
- Normalized
2.2
2.0
1.8
1.6
1.4
1.2
1.0
I
D
= 26A
I
D
= 13A
I
D
- Amperes
16
12
8V
8
4
7V
0
0
2
4
6
8
10
12
14
16
18
20
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 13A Value
vs. Drain Current
2.8
2.6
2.4
V
GS
= 10V
T
J
= 125ºC
28
24
20
Fig. 6. Maximum Drain Current vs.
Case Temperature
R
DS(on)
- Normalized
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
5
10
15
20
25
30
35
40
45
50
55
60
65
T
J
= 25ºC
I
D
- Amperes
16
12
8
4
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2008 IXYS CORPORATION,All rights reserved
IXFK26N100P
IXFX26N100P
Fig. 7. Input Admittance
40
35
30
25
20
15
10
10
5
0
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
5
0
0
5
10
15
20
25
30
35
40
T
J
= 125ºC
25ºC
- 40ºC
50
45
40
Fig. 8. Transconductance
g
f s
- Siemens
35
30
25
20
15
T
J
= - 40ºC
25ºC
125ºC
I
D
- Amperes
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
80
70
60
16
14
12
V
DS
= 500V
I
D
= 13A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
50
40
30
20
10
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
T
J
= 125ºC
T
J
= 25ºC
V
GS
- Volts
10
8
6
4
2
0
0
40
80
120
160
200
240
280
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
100,000
1.000
Fig. 12. Maximum Transient Thermal
Impedance
f
= 1 MHz
Ciss
Capacitance - PicoFarads
10,000
1,000
Coss
Z
(th)JC
- ºC / W
30
35
40
0.100
0.010
100
Crss
10
0
5
10
15
20
25
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
- Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_32N100P(86)3-28-08-B
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