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DATA SHEET
NPN SILICON RF TRANSISTOR
2SC3356
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR MICROWAVE LOW-NOISE AMPLIFICATION
3-PIN MINIMOLD
FEATURES
• Low noise and high gain : NF = 1.1 dB TYP., G
a
= 11 dB TYP. @ V
CE
= 10 V, I
C
= 7 mA, f = 1 GHz
• High power gain : MAG = 13 dB TYP. @ V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz
ORDERING INFORMATION
Part Number
2SC3356
2SC3356-T1B
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (Collector) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
20
12
3.0
100
200
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Free air
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10209EJ02V0DS (2nd edition)
Date Published June 2004 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices, Ltd.1985, 2004
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