Preliminary Technical Information
TrenchT2
TM
HiperFET
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrnsic Rectifier
IXFA130N10T2
IXFP130N10T2
V
DSS
I
D25
R
DS(on)
= 100V
= 130A
10.1m
TO-263 AA (IXFA)
G
S
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
LRMS
I
DM
I
A
E
AS
dV/dt
P
D
T
J
T
JM
T
stg
T
L
T
sold
M
d
Weight
Test Conditions
T
J
= 25C to 175C
T
J
= 25C to 175C, R
GS
= 1M
Continuous
Transient
T
C
= 25C (Chip Capability)
Lead Current Limit, RMS
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
I
S
I
DM
,, V
DD
V
DSS
,T
J
175C
T
C
= 25C
Maximum Ratings
100
100
20
30
130
120
300
65
800
20
360
-55 ... +175
175
-55 ... +175
V
V
V
V
A
A
A
A
mJ
V/ns
W
C
C
C
C
C
g
g
Features
D (Tab)
TO-220AB (IXFP)
G
DS
D (Tab)
G = Gate
S = Source
D
= Drain
Tab = Drain
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-220)
TO-263
TO-220
300
260
1.13 / 10
2.5
3.0
Nm/lb.in.
International Standard Packages
175°C Operating Temperature
High Current Handling Capability
Fast Intrinsic Rectifier
Dynamic dV/dt Rated
Low R
DS(on)
Advantages
Symbol
Test Conditions
(T
J
= 25C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250A
V
DS
= V
GS
, I
D
= 1mA
V
GS
=
20V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 150C
V
GS
= 10V, I
D
= 0.5 • I
D25
, Notes 1, 2
Characteristic Values
Min. Typ.
Max.
100
2.0
4.5
V
V
Easy to Mount
Space Savings
High Power Density
Applications
200
nA
10
A
500
A
10.1 m
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
© 2017 IXYS CORPORATION, All Rights Reserved
DS100111A(10/17)
IXFA130N10T2
IXFP130N10T2
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCH
TO-220
0.50
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 3.3 (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min. Typ.
Max.
45
68
6600
640
133
16
38
24
25
130
35
42
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.42
C/W
C/W
Dim.
A
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
Millimeter
Min.
Max.
4.06
0.51
1.14
0.40
1.14
8.64
8.00
9.65
6.22
2.54
14.61
2.29
1.02
1.27
0
4.83
0.99
1.40
0.74
1.40
9.65
8.89
10.41
8.13
BSC
15.88
2.79
1.40
1.78
0.13
Inches
Min. Max.
.160
.020
.045
.016
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
0
.190
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.005
1.
2.
3.
4.
Gate
Collector
Emitter
Collector
Bottom Side
TO-263 (IXFA) Outline
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
I
RM
Q
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= 65A, V
GS
= 0V, Note 1
I
F
= 65A, V
GS
= 0V
-di/dt = 100A/s
V
R
= 50V
4.8
156
Characteristic Values
Min. Typ.
Max.
130
520
1.3
100
A
A
V
ns
A
nC
TO-220 (IXFP) Outline
Notes: 1.
Pulse test, t
300s; duty cycle, d
2%.
2. On through-hole packages, R
DS(on)
Kelvin test contact
location must be 5mm or less from the package body.
Pins:
1 - Gate
3 - Source
2 - Drain
4 - Drain
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a
subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered
reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions
without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFA130N10T2
IXFP130N10T2
Fig. 1. Output Characteristics @ T
J
= 25
o
C
140
120
100
V
GS
= 15V
10V
9V
350
300
8V
250
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
V
GS
= 15V
10V
9V
8V
I
D
- Amperes
I
D
- Amperes
80
60
40
20
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
7V
200
150
100
6V
50
5V
0
7V
6V
5V
1.4
0
2
4
6
8
10
12
14
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 150
o
C
140
120
100
V
GS
= 15V
10V
9V
8V
3.4
3.0
2.6
Fig. 4. R
DS(on)
Normalized to I
D
= 65A Value vs.
Junction Temperature
V
GS
= 10V
R
DS(on)
- Normalized
I
D
- Amperes
2.2
1.8
1.4
1.0
I
D
= 130A
I
D
= 65A
80
60
7V
6V
40
20
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
5V
0.6
0.2
-50
-25
0
25
50
75
100
125
150
175
V
DS
- Volts
T
J
- Degrees Centigrade
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
Fig. 5. R
DS(on)
Normalized to I
D
= 65A Value vs.
Drain Current
140
V
GS
= 10V
15V
T
J
= 175 C
100
o
Fig. 6. Drain Current vs. Case Temperature
External Lead Current Limit
120
R
DS(on)
- Normalized
I
D
- Amperes
T
J
= 25 C
o
80
60
40
20
0
50
100
150
200
250
300
-50
-25
0
25
50
75
100
125
150
175
I
D
- Amperes
T
C
- Degrees Centigrade
© 2017 IXYS CORPORATION, All Rights Reserved
IXFA130N10T2
IXFP130N10T2
Fig. 7. Input Admittance
160
140
120
70
100
90
80
T
J
= - 40 C
o
Fig. 8. Transconductance
25 C
150 C
o
o
I
D
- Amperes
100
80
60
40
20
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
g
f s
- Siemens
60
50
40
30
20
10
0
0
20
40
60
80
100
120
T
J
= 125 C
25 C
- 40 C
o
o
o
140
160
180
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
350
300
250
10
9
8
7
V
DS
= 50V
I
D
= 65A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
200
150
T
J
= 150 C
100
T
J
= 25 C
50
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
o
o
V
GS
- Volts
6
5
4
3
2
1
0
0
10
20
30
40
50
60
70
80
90
100
110
120
130
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
10,000
1,000
Fig. 12. Forward-Bias Safe Operating Area
25μs
Capacitance - PicoFarads
f
= 1 MHz
Ciss
R
DS(on)
Limit
10ms
100μs
1ms
1,000
Coss
I
D
- Amperes
100
10
T
J
= 175 C
Crss
100
0
5
10
15
20
25
30
35
40
1
1
T
C
= 25 C
Single Pulse
o
o
100ms
DC
10
100
V
DS
- Volts
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA130N10T2
IXFP130N10T2
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
60
55
50
R
G
= 3.3Ω, V
GS
= 10V
V
DS
= 50V
52
48
44
T
J
= 25 C
40
36
32
28
24
25
35
45
55
65
75
85
95
105
115
125
65
70
75
80
85
90
95
100
105
110
115
120
125
130
T
J
= 125 C
o
o
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
R
G
= 3.3Ω, V
GS
= 10V
V
DS
= 50V
t
r
- Nanoseconds
40
35
30
25
20
15
10
I
D
= 65A
I
D
= 130A
T
J
- Degrees Centigrade
t
r
- Nanoseconds
45
I
D
- Amperes
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
300
40
50
45
40
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
t
f
V
DS
= 50V
I
D
= 65A
50
45
40
t
r
250
o
t
d(on)
35
t
d(off)
T
J
= 125 C, V
GS
= 10V
V
DS
= 50V
R
G
= 3.3Ω, V
GS
= 10V
t
d(on)
- Nanoseconds
t
d(off)
- Nanoseconds
t
r
- Nanoseconds
t
f
- Nanoseconds
200
30
35
30
25
20
15
35
30
25
I
D
= 130A
20
15
10
125
150
I
D
= 130A, 65A
100
25
20
50
15
0
3
4
5
6
7
8
9
10
10
10
25
35
45
55
65
75
85
95
105
115
R
G
- Ohms
T
J
- Degrees Centigrade
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
29
28
27
55
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
130
180
50
110
45
t
f
V
DS
= 50V
t
d(off)
t
f
o
t
d(off)
R
G
= 3.3Ω, V
GS
= 10V
T
J
= 125 C, V
GS
= 10V
V
DS
= 50V
150
t
d(off)
- Nanoseconds
t
d(off)
- Nanoseconds
t
f
- Nanoseconds
t
f
- Nanoseconds
26
25
24
23
22
21
20
65
70
75
80
85
90
95
T
J
= 25 C
o
40
35
T
J
= 125 C
o
90
I
D
= 65A, 130A
120
70
90
30
25
20
50
60
30
15
30
10
100 105 110 115 120 125 130
10
3
4
5
6
7
8
9
10
0
I
D
- Amperes
R
G
- Ohms
© 2017 IXYS CORPORATION, All Rights Reserved
Talking
京公网安备 11010802033920号
EEWORLD
