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IXFP230N075T2

Description
TrenchT2 HiperFET Power MOSFET
File Size201KB,6 Pages
ManufacturerIXYS ( Littelfuse )
Websitehttp://www.ixys.com/
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IXFP230N075T2 Overview

TrenchT2 HiperFET Power MOSFET

TrenchT2
TM
HiperFET
TM
Power MOSFET
IXFA230N075T2
IXFP230N075T2
V
DSS
I
D25
R
DS(on)
= 75V
= 230A
4.2mΩ
Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-263 AA (IXFA)
G
S
D (Tab)
Symbol
V
DSS
V
DGR
V
GSM
I
D25
I
LRMS
I
DM
I
A
E
AS
P
D
T
J
T
JM
T
stg
T
L
T
sold
M
d
Weight
Test Conditions
T
J
= 25°C to 175°C
T
J
= 25°C to 175°C, R
GS
= 1MΩ
Transient
T
C
= 25°C (Chip Capability)
Lead Current Limit, RMS
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
Maximum Ratings
75
75
±
20
230
120
700
115
850
480
-55 ... +175
175
-55 ... +175
V
V
V
A
A
A
A
mJ
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
TO-220AB (IXFP)
G
DS
D (Tab)
G = Gate
S = Source
D
= Drain
Tab = Drain
Features
International Standard Packages
175°C Operating Temperature
High Current Handling Capability
Avalanche Rated
Fast Intrinsic Rectifier
Low R
DS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-220)
TO-263
TO-220
300
260
1.13 / 10
2.5
3.0
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 150°C
V
GS
= 10V, I
D
= 50A, Note 1
Characteristic Values
Min.
Typ.
Max.
75
2.0
4.0
V
V
Applications
Automotive
-
Motor Drives
-
12V Power Bus
-
ABS Systems
DC/DC Converters and Off-Line UPS
Primary- Side Switch
High Current Switching Applications
±200
nA
25
μA
250
μA
4.2 mΩ
© 2010 IXYS CORPORATION, All Rights Reserved
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