2SC1623F
Elektronische Bauelemente
150 mA, 60 V
NPN Epitaxial Planar Transistor
DESCRIPTION
The 2SC1623F is designed for use driver stage of AF amplifier and general purpose application.
PACKAGE DIMENSIONS
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Total Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
T
J
, T
STG
Ratings
60
50
5
150
250
+150, -55 ~ +150
Unit
V
V
V
mA
mW
℃
CHARACTERISTICS at Ta = 25°C
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)1
*h
FE
1
*h
FE2
*h
FE3
fT
Cob
Min.
60
50
5
-
-
-
-
90
25
80
80
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
250
1.0
600
-
-
-
3.5
Unit
V
V
V
nA
nA
mV
V
IC=100uA
IC=1mA
IE=10uA
VCB=60V
VEB=5V
Test Conditions
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=1mA
VCE=6V, IC=150mA
VCE=1V, IC=10mA
MHz
pF
VCE=10V, IC=1mA, f=100MHz
VCB=10V, f=1MHz, IE=0A
* Pulse Test: Pulse Width≦380μs, Duty Cycle≦2%
CLASSIFICATION OF h
FE
1
Rank
Range
P
90 - 180
Y
135 - 270
G
200 - 400
B
300 - 600
01-June-2002 Rev. A
Page 1 of 2
Embedded System
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