PolarHV
TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH 24N80P
IXFK 24N80P
IXFT 24N80P
V
DSS
= 800 V
I
D25
= 24 A
R
DS(on)
≤
400 mΩ
Ω
t
rr
≤
250 ns
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/μs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
Maximum Ratings
800
800
±30
±40
24
55
12
50
1.5
10
650
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
J
TO-247 (IXFH)
G
D
S
D (TAB)
TO-268 (IXFT) Case Style
G
V/ns
W
°C
°C
°C
S
D (TAB)
TO-264 AA (IXFK)
Mounting torque (TO-247 & TO-264)
TO-247
TO-268
TO-264
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
1.13/10 Nm/lb.in.
6
5
10
300
260
g
g
g
°
C
°
C
G
D
S
(TAB)
T
L
T
SOLD
G = Gate
S = Source
Features
D = Drain
Tab = Drain
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
μA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±30
V, V
DS
= 0 V
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
800
3.0
5.0
±100
25
1000
400
V
V
nA
μA
μA
mΩ
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
DS99572E(07/06)
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
μs,
duty cycle d
≤
2 %
© 2006 IXYS All rights reserved
IXFH 24N80P IXFK 24N80P
IXFT 24N80P
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min. Typ. Max.
15
25
7200
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
470
26
32
V
GS
= 10 V, V
DS
= 0.5 I
D25
R
G
=2
Ω
(External)
27
75
24
105
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
30
33
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.19
°C/W
TO-247
TO-264
0.21
0.15
°C/W
°C/W
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A
1
A
2
2.2
2.6
b
1.0
1.4
1.65
2.13
b
1
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
1
2
3
TO-247 AD (IXFH) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
R
thCS
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Test Conditions
V
GS
= 0 V
Repetitive
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min. Typ. Max.
24
55
1.5
250
0.8
6.0
A
A
V
ns
μC
A
TO-264 (IXFK) Outline
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
μs,
duty cycle d
≤
2 %
I
F
= 25A, -di/dt = 100 A/μs
V
R
= 100V
TO-268 (IXFT)Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
7,005,734 B2
6,759,692
6,771,478 B2
IXFH 24N80P IXFK 24N80P
IXFT 24N80P
Fig. 1. Output Characteristics
@ 25ºC
24
22
20
18
6V
V
GS
= 10V
55
50
45
40
6V
V
GS
= 10V
7V
Fig. 2. Extended Output Characteristics
@ 25ºC
I
D
- Amperes
I
D
- Amperes
5V
16
14
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
9
35
30
25
20
15
10
5
0
0
3
6
9
12
15
18
21
24
27
30
5V
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics
@ 125ºC
24
22
20
V
GS
= 10V
6V
3.1
2.8
2.5
Fig. 4. R
DS(on)
Normalized to I
D
= 12A Value
vs. Junction Temperature
V
GS
= 10V
R
DS(on)
- Normalized
18
I
D
- Amperes
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
5V
2.2
1.9
1.6
1.3
1
0.7
0.4
I
D
= 24A
I
D
= 12A
14
16
18
20
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 12A Value
vs. Drain Current
3
2.8
2.6
V
GS
= 10V
T
J
= 125ºC
26
24
22
20
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
5
10
15
20
25
30
35
40
45
50
55
T
J
= 25ºC
18
Fig. 6. Maximum Drain Current vs.
Case Temperature
R
DS(on)
- Normalized
I
D
- Amperes
16
14
12
10
8
6
4
2
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2006 IXYS All rights reserved
IXFH 24N80P IXFK 24N80P
IXFT 24N80P
Fig. 7. Input Admittance
40
36
32
65
60
55
50
Fig. 8. Transconductance
g
f s
- Siemens
28
45
40
35
30
25
20
15
10
T
J
= - 40ºC
25ºC
125ºC
I
D
- Amperes
24
20
16
12
8
4
0
3
3.5
4
4.5
5
5.5
6
T
J
= 125ºC
25ºC
- 40ºC
5
0
0
5
10
15
20
25
30
35
40
45
50
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
36
32
28
10
9
8
7
V
DS
= 400V
I
D
= 12A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
24
V
GS
- Volts
T
J
= 25ºC
0.7
0.8
0.9
1
6
5
4
3
2
1
0
20
16
12
8
4
0
0.3
0.4
0.5
0.6
T
J
= 125ºC
0
10
20
30
40
50
60
70
80
90
100
110
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
10,000
Ciss
1.00
Fig. 12. Maximum Transient Thermal
Resistance
Capacitance - PicoFarads
R
(th)JC
- ºC / W
30
35
40
1,000
C oss
0.10
100
f = 1 MHz
10
0
5
10
15
20
C rss
25
0.01
0.0001
0.001
0.01
0.1
1
10
V
DS
- Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
F_24N80P (8J) 6-22-06.xls
京公网安备 11010802033920号
EEWORLD
