Preliminary Technical Information
TrenchMV
TM
Power
MOSFET HiperFET
TM
N-Channel Enhancement Mode
Avalanche Rated
Fast intrisic diode
Symbol
V
DSS
V
GSM
I
D25
I
LRMS
I
DM
I
A
E
AS
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-263
Test Conditions
T
J
= 25°C to 175°C
Transient
T
C
= 25°C
Lead Current Limit, RMS
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
IXFA130N10T
IXFP130N10T
V
DSS
I
D25
=
=
R
DS(on)
≤
TO-263 (IXFA)
100V
130A
9.1mΩ
Ω
G
Maximum Ratings
100
±
30
130
75
350
65
750
360
-55 ... +175
175
-55 ... +175
300
260
1.13 / 10
3.0
2.5
V
V
A
A
A
A
mJ
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
G
D
S
(TAB)
TO-220 (IXFP)
S
(TAB)
D = Drain
TAB = Drain
G = Gate
S = Source
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175
°C
Operating Temperature
Fast intrinsic diode
Advantages
Easy to mount
Space savings
High power density
Applications
Symbol
Test Conditions
(T
J
= 25°C unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
DS
= V
DSS
V
GS
= 0V
T
J
= 150°C
Characteristic Values
Min.
Typ.
Max.
100
2.5
4.5
±
200
10
500
9.1
V
V
nA
μA
μA
mΩ
V
GS
= 10V, I
D
= 25A, Notes 1, 2
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
High Current Switching
Applications
High Voltage Synchronous Recifier
© 2008 IXYS CORPORATION, All rights reserved
DS100020(07/08)
IXFA130N10T
IXFP130N10T
Symbol
Test Conditions
Characteristic Values
Min.
55
Typ.
93
5080
V
GS
= 0V, V
DS
= 25V, f = 1MHz
630
95
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 25A
R
G
= 5Ω (External)
30
47
44
28
104
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 25A
30
29
0.42
TO-220
0.50
Max.
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
°C/W
°C/W
Pins:
1 - Gate
3 - Source
Dim.
A
A1
b
b2
c
c2
D
D1
TO-263 (IXFA) Outline
(T
J
= 25°C unless otherwise specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCH
V
DS
= 10V, I
D
= 60A, Note 1
2 - Drain
4, TAB - Drain
Inches
Min. Max.
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
0
.018
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.015
.029
Millimeter
Min.
Max.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
14.61
2.29
1.02
1.27
0
0.46
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
10.29
8.13
BSC
15.88
2.79
1.40
1.78
0.38
0.74
Source-Drain Diode
Symbol
Test Conditions
T
J
= 25°C unless otherwise specified)
I
S
I
SM
V
SD
t
rr
I
RM
Q
rr
V
GS
= 0V
Repetitive, pulse width limited by T
JM
I
F
= 25A, V
GS
= 0V, Note 1
I
F
= 65A, -di/dt = 100A/μs
V
R
= 0.5 • V
DSS
, V
GS
= 0V
67
4.7
160
Characteristic Values
Min.
Typ.
Max.
130
350
1.0
A
A
V
ns
A
nC
E
E1
e
L
L1
L2
L3
L4
R
TO-220 (IXFP) Outline
Notes: 1.
Pulse test, t
≤
300
μs;
duty cycle, d
≤
2%.
2. On through-hole packages, R
DS(on)
Kelvin test contact
location must be 5 mm or less from the package body.
Pins:
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFA130N10T
IXFP130N10T
Fig. 1. Output Characteristics
@ 25ºC
130
120
110
100
90
200
V
GS
= 10V
8V
280
240
V
GS
= 10V
9V
Fig. 2. Extended Output Characteristics
@ 25ºC
8V
I
D
- Amperes
80
70
60
50
40
30
20
10
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
6V
7V
I
D
- Amperes
160
120
80
40
6V
0
0
1
2
3
4
5
6
7
8
9
10
7V
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics
@ 150ºC
130
120
110
100
90
V
GS
= 10V
9V
8V
2.8
2.6
2.4
Fig. 4. R
DS(on)
Normalized to I
D
= 65A Value
vs. Junction Temperature
V
GS
= 10V
R
DS(on)
- Normalized
2.2
2.0
1.8
1.6
1.4
1.2
1.0
I
D
= 130A
I
D
= 65A
I
D
- Amperes
80
70
60
50
40
30
20
10
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
5V
6V
7V
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
175
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 65A Value
vs. Drain Current
3.0
2.8
2.6
V
GS
= 10V
15V
- - - -
T
J
= 175ºC
140
Fig. 6. Drain Current vs. Case Temperature
External Lead Current Limit for TO-263 (7-Lead)
120
100
R
DS(on)
- Normalized
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
40
80
120
160
200
240
280
T
J
= 25ºC
I
D
- Amperes
80
60
40
20
0
-50
-25
0
25
50
75
100
125
150
175
External Lead Current Limit for TO-3P, TO-220, & TO-263
I
D
- Amperes
T
C
- Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved
IXFA130N10T
IXFP130N10T
Fig. 7. Input Admittance
270
240
210
T
J
= - 40ºC
25ºC
150ºC
130
120
110
100
T
J
= - 40ºC
Fig. 8. Transconductance
I
D
- Amperes
180
150
120
90
60
30
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
g
f s
- Siemens
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120
140
160
180
200
220
150ºC
25ºC
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
270
240
210
10
9
8
7
V
DS
= 50V
I
D
= 25A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
V
GS
- Volts
T
J
= 150ºC
T
J
= 25ºC
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
180
150
120
90
60
30
0
6
5
4
3
2
1
0
0
10
20
30
40
50
60
70
80
90
100
110
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
10,000
1.00
Fig. 12. Maximum Transient Thermal
Impedance
Capacitance - PicoFarads
Ciss
1,000
Coss
Z
(th)JC
- ºC / W
30
35
40
0.10
100
Crss
f = 1 MHz
10
0
5
10
15
20
25
0.01
0.0001
0.001
0.01
0.1
1
10
V
DS
- Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFA130N10T
IXFP130N10T
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
65
60
55
R
G
= 5Ω
V
GS
= 10V
V
DS
= 50V
62
58
54
R
G
= 5Ω
V
GS
= 10V
V
DS
= 50V
T
J
= 25ºC
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
t
r
- Nanoseconds
t
r
- Nanoseconds
50
46
42
38
34
30
T
J
= 125ºC
50
45
40
35
30
25
25
35
45
55
65
75
85
95
105
115
125
I
D
I
D
= 50A
= 25A
26
22
25
30
35
40
45
50
T
J
- Degrees Centigrade
I
D
- Amperes
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
130
120
110
53
40
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
68
50
47
44
38
36
I
D
= 25A
56
52
I
D
= 50A
48
44
40
125
34
32
30
28
26
25
35
45
55
65
75
85
95
105
115
t
r
V
DS
= 50V
t
d(on)
- - - -
t
f
V
DS
= 50V
t
d(off)
- - - -
64
60
T
J
= 125ºC, V
GS
= 10V
R
G
= 5Ω, V
GS
= 10V
t
r
- Nanoseconds
100
90
80
70
60
50
40
30
20
4
t
d(off)
- Nanoseconds
t
d(on)
- Nanoseconds
I
D
= 50A
41
38
I
D
= 25A
35
32
29
26
23
20
6
8
10
12
14
16
18
20
R
G
- Ohms
t
f
- Nanoseconds
T
J
- Degrees Centigrade
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
40
38
36
T
J
= 125ºC
70
66
62
58
54
50
T
J
= 25ºC
46
42
38
25
30
35
40
45
50
100
90
80
70
60
50
40
30
4
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
170
25A < I
D
t
r
V
DS
= 50V
t
d(on)
- - - -
< 50A
150
130
110
T
J
= 125ºC, V
GS
= 10V
t
d(off)
- Nanoseconds
34
32
30
28
26
24
t
f
V
DS
= 50V
t
d(off)
- - - -
R
G
= 5Ω, V
GS
= 10V
t
f
- Nanoseconds
t
d(off) - Nanoseconds
t
f - Nanoseconds
I
D
= 25A
90
I
= 50A
70
50
30
D
6
8
10
12
14
16
18
20
I
D
- Amperes
R
G
- Ohms
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: T_130N10T (4V)07-29-08-A
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