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ISL89160FRTAZ-T13

Description
AND GATE BASED MOSFET DRIVER, 3 X 3 MM, ROHS COMPLIANT, PLASTIC, TDFN-8
CategoryAnalog mixed-signal IC    Drivers and interfaces   
File Size360KB,14 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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ISL89160FRTAZ-T13 Overview

AND GATE BASED MOSFET DRIVER, 3 X 3 MM, ROHS COMPLIANT, PLASTIC, TDFN-8

ISL89160FRTAZ-T13 Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
package instruction,
Reach Compliance Codeunknown
Interface integrated circuit typeAND GATE BASED MOSFET DRIVER
High Speed, Dual Channel, 6A, 4.5 to 16V
OUT
, Power
MOSFET Drivers
ISL89160, ISL89161, ISL89162
The ISL89160, ISL89161, and ISL89162 are high-speed, 6A,
dual channel MOSFET drivers. These parts are identical to the
ISL89163, ISL89164, ISL89165 drivers but without the enable
inputs for each channel.
Two input logic thresholds are available: 3.3V (CMOS and TTL
compatible) and 5.0V (CMOS).
Precision thresholds on all logic inputs allow the use of external
RC circuits to generate accurate and stable time delays on both
inputs, INA and INB. This capability is very useful for dead time
control.
At high switching frequencies, these MOSFET drivers use very
little bias current. Separate, non-overlapping drive circuits are
used to drive each CMOS output FET to prevent shoot-thru
currents in the output stage.
The start-up sequence is design to prevent unexpected glitches
when V
DD
is being turned on or turned off. When V
DD
< ~1V, an
internal 10kΩ resistor between the output and ground helps to
keep the output voltage low. When ~1V < V
DD
< UV, both outputs
are driven low with very low resistance and the logic inputs are
ignored. This insures that the driven FETs are off. When
V
DD
> UVLO, and after a short delay, the outputs now respond to
the logic inputs.
Features
• Dual output, 6A peak currents, can be paralleled
• Typical ON-resistance <1Ω
• Specified Miller plateau drive currents
• Very low thermal impedance (θ
JC
= 3°C/W)
• Hysteretic input logic levels for 3.3V CMOS, 5V CMOS, and TTL
• Precision threshold inputs for time delays with external RC
components
• 20ns rise and fall time driving a 10nF load.
• NC pins may be connected to ground or VDD to ease PCB
layout difficulties.
Applications
• Synchronous Rectifier (SR) driver
• Switch mode power supplies
• Motor drives, class D amplifiers, UPS, inverters
• Pulse transformer driver
• Clock/line driver
Related Literature
AN1603
“ISL6752/54EVAL1Z ZVS DC/DC Power Supply with
Synchronous Rectifiers User Guide”
3.5
3.0
OPTION B THRESHOLDS (5V)
2.5
2.0
1.5
1.0
0.5
0.0
-40
NEGATIVE THRESHOLD
POSITIVE THRESHOLD
V
DD
NC
INA
GND
INB
1
2
3
4
EPAD
8
7
6
5
NC
OUTA
OUTB
4.7µF
-25
10
5
20
35
50
65
80
95
110 125
TEMPERATURE (°C)
FIGURE 1. TYPICAL APPLICATION
FIGURE 2. TEMPERATURE STABLE LOGIC THRESHOLDS
February 20, 2013
FN7719.3
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
|
Copyright Intersil Americas LLC 2010-2013. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.

ISL89160FRTAZ-T13 Related Products

ISL89160FRTAZ-T13 ISL89162FRTBZ-T13 ISL89161FRTBZ-T13 ISL89162FRTAZ-T13 ISL89160FRTBZ-T13 ISL89161FRTAZ-T13
Description AND GATE BASED MOSFET DRIVER, 3 X 3 MM, ROHS COMPLIANT, PLASTIC, TDFN-8 AND GATE BASED MOSFET DRIVER, 3 X 3 MM, ROHS COMPLIANT, PLASTIC, TDFN-8 AND GATE BASED MOSFET DRIVER, 3 X 3 MM, ROHS COMPLIANT, PLASTIC, TDFN-8 AND GATE BASED MOSFET DRIVER, 3 X 3 MM, ROHS COMPLIANT, PLASTIC, TDFN-8 AND GATE BASED MOSFET DRIVER, 3 X 3 MM, ROHS COMPLIANT, PLASTIC, TDFN-8 AND Gate Based MOSFET Driver
Maker Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation
Reach Compliance Code unknown unknown unknown unknown unknown compliant
Interface integrated circuit type AND GATE BASED MOSFET DRIVER AND GATE BASED MOSFET DRIVER AND GATE BASED MOSFET DRIVER AND GATE BASED MOSFET DRIVER AND GATE BASED MOSFET DRIVER AND GATE BASED MOSFET DRIVER
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