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DF02S

Description
1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size30KB,2 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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DF02S Overview

1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

DF02S Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeDIP
package instructionSDIP-4
Contacts4
Manufacturer packaging code4LDS; SDIP; 6.5MM WIDE
Reach Compliance Code_compli
ECCN codeEAR99
Samacsys DescriptiBridge Rectifier Single Phase, 1.5A 200V, 4-Pin SDIP
Other featuresUL RECOGNIZED
Minimum breakdown voltage200 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current50 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation3.1 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

DF02S Related Products

DF02S DF005S_10 DF04S DF06S DF08S
Description 1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER,1-PHASE FULL-WAVE,400V V(RRM),SO 1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Diode type BRIDGE RECTIFIER DIODE bridge rectifier diode BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Brand Name Fairchild Semiconduc - Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor
Is it lead-free? Lead free - Lead free Lead free Lead free
Is it Rohs certified? conform to - conform to conform to conform to
Parts packaging code DIP - DIP DIP DIP
package instruction SDIP-4 - SDIP-4 SDIP-4 SDIP-4
Contacts 4 - 4 4 4
Manufacturer packaging code 4LDS; SDIP; 6.5MM WIDE - 4LDS; SDIP; 6.5MM WIDE 4LDS; SDIP; 6.5MM WIDE 4LDS; SDIP; 6.5MM WIDE
Reach Compliance Code _compli - not_compliant not_compliant not_compliant
ECCN code EAR99 - EAR99 EAR99 EAR99
Other features UL RECOGNIZED - UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
Minimum breakdown voltage 200 V - 400 V 600 V 800 V
Configuration BRIDGE, 4 ELEMENTS - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON - SILICON SILICON SILICON
Maximum forward voltage (VF) 1.1 V - 1.1 V 1.1 V 1.1 V
JESD-30 code R-PDSO-G4 - R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
JESD-609 code e3 - e3 e3 e3
Humidity sensitivity level 1 - 1 1 1
Maximum non-repetitive peak forward current 50 A - 50 A 50 A 50 A
Number of components 4 - 4 4 4
Phase 1 - 1 1 1
Number of terminals 4 - 4 4 4
Maximum operating temperature 150 °C - 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C - -55 °C -55 °C -55 °C
Maximum output current 1.5 A - 1.5 A 1.5 A 1.5 A
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation 3.1 W - 3.1 W 3.1 W 3.1 W
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 200 V - 400 V 600 V 800 V
surface mount YES - YES YES YES
Terminal surface Matte Tin (Sn) - Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING - GULL WING GULL WING GULL WING
Terminal location DUAL - DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches - - 1 1 1
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