Low-side Common Bias Voltage for IC and IGBTs Driving
Capacitor for Fault Output Duration Time Selection
Capacitor (Low-pass Filter) for Short-Current Detection Input
Signal Input for High-side U Phase
High-side Bias Voltage for U Phase IC
High-side Bias Voltage for U Phase IGBT Driving
High-side Bias Voltage Ground for U Phase IGBT Driving
Signal Input for High-side V Phase
High-side Bias Voltage for V Phase IC
High-side Bias Voltage for V Phase IGBT Driving
High-side Bias Voltage Ground for V Phase IGBT Driving
Signal Input for High-side W Phase
High-side Bias Voltage for W Phase IC
High-side Bias Voltage for W Phase IGBT Driving
High-side Bias Voltage Ground for W Phase IGBT Driving
Negative DC–Link Input for U Phase
Negative DC–Link Input for V Phase
Negative DC–Link Input for W Phase
Output for U Phase
Output for V Phase
Output for W Phase
Positive DC–Link Input
FSBB30CH60 Rev. B
3
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FSBB30CH60 Smart Power Module
Internal Equivalent Circuit and Input/Output Pins
P (27)
(19) V
B(W )
(18) V
CC(W H )
VB
VCC
COM
IN
OU T
VS
W (26)
(17) IN
(W H)
(20) V
S(W )
(15) V
B(V)
(14) V
CC(VH)
VB
VCC
COM
IN
OU T
VS
V (25)
(13) IN
(VH)
(16) V
S(V)
(11) V
B(U)
(10) V
CC(UH)
VB
VCC
COM
IN
VS
U (24)
OU T
(9) IN
(UH)
(12) V
S(U)
(8) C
SC
(7) C
FO D
(6) V
FO
C(SC)
C(FOD)
VFO
OUT(W L)
N
W
(23)
(5) IN
(W L)
(4) IN
(VL)
(3) IN
(UL)
(2) CO M
(1) V
CC(L)
IN(W L) OUT(VL)
IN(VL)
IN(UL)
COM
VCC
OUT(UL)
V
SL
N
U
(21)
N
V
(22)
Note:
1. Inverter low-side is composed of three IGBTs including freewheeling diodes for each IGBT and one control IC which has gate driving and protection functions.
2. Inverter power side is composed of four inverter dc-link input terminals and three inverter output terminals.
3. Inverter high-side is composed of three IGBTs including freewheeling diodes (FWD) and three drive ICs for each IGBT.
Figure 3.
FSBB30CH60 Rev. B
4
www.fairchildsemi.com
FSBB30CH60 Smart Power Module
Absolute Maximum Ratings
(T
J
= 25°C,
Inverter Part
Symbol
V
PN
V
PN(Surge)
V
CES
± I
C
± I
CP
P
C
T
J
Note:
Unless Otherwise Specified)
Parameter
Supply Voltage
Supply Voltage (Surge)
Collector-emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Collector Dissipation
Operating Junction Temperature
T
C
= 25°C
Conditions
Applied between P- N
U
, N
V
, N
W
Applied between P- N
U
, N
V
, N
W
Rating
450
500
600
30
45
103
-20 ~ 125
Units
V
V
V
A
A
W
°C
T
C
= 25°C, Under 1ms Pulse Width
T
C
= 25°C per One Chip
(Note 1)
1. The maximum junction temperature rating of the power chips integrated within the SPM is 150°C(@T
C
≤
100°C). However, to insure safe operation of the SPM, the average
junction temperature should be limited to T
J(ave)
≤
125°C (@T
C
≤
100°C)
Control Part
Symbol
V
CC
V
BS
V
IN
V
FO
I
FO
V
SC
Parameter
Control Supply Voltage
High-side Control Bias
Voltage
Input Signal Voltage
Fault Output Supply Voltage
Fault Output Current
Conditions
Applied between V
CC(UH)
, V
CC(VH)
, V
CC(WH)
, V
CC(L)
-
COM
Applied between V
B(U)
- V
S(U)
, V
B(V)
- V
S(V)
, V
B(W)
-
V
S(W)
Applied between IN
(UH)
, IN
(VH)
, IN
(WH)
, IN
(UL)
, IN
(VL)
,
IN
(WL)
- COM
Applied between V
FO
- COM
Sink Current at V
FO
Pin
Rating
20
20
-0.3~17
-0.3~V
CC
+0.3
5
-0.3~V
CC
+0.3
Units
V
V
V
V
mA
V
Current Sensing Input Voltage Applied between C
SC
- COM
Total System
Symbol
V
PN(PROT)
T
C
T
STG
V
ISO
Parameter
Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
Conditions
V
CC
= V
BS
= 13.5 ~ 16.5V
T
J
= 125°C, Non-repetitive, less than 2µs
-20°C≤ T
J
≤
125°C, See Figure 2
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to ceramic substrate
Rating
400
-20 ~ 100
-40 ~ 125
2500
Units
V
°C
°C
V
rms
Thermal Resistance
Symbol
R
th(j-c)Q
R
th(j-c)F
Note:
2. For the measurement point of case temperature(T
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