FPAB30BH60 Smart Power Module
(SPM
®
)
December 2007
FPAB30BH60
Smart Power Module(SPM
®
) for Front-End Rectifier
General Description
FPAB30BH60 is an advanced smart power module(SPM
®
)
of PFC(Power Factor Correction) that Fairchild has newly
developed and designed mainly targeting mid-power
application especially for an air conditioners. It combines
optimized circuit protection and drive IC matched to high
frequency switching IGBTs. System reliability is futher
enhanced by the integrated under-voltage lock-out and
over-current protection function.
Features
• Low thermal resistance due to Al
2
O
3
-DBC substrate
• 600V-30A 1-phase IGBT PWM semi-converter including
a drive IC for gate driving and protection
• Typical switching frequency of 20kHz
• Isolation rating of 2500Vrms/min.
Applications
• AC 85V ~ 264V single-phase front-end rectifier
Fig. 1.
©2007 Fairchild Semiconductor Corporation
FPAB30BH60 Smart Power Module
(SPM
®
)
Integrated Power Functions
• PFC converter for single-phase AC/DC power conversion (Please refer to Fig. 3)
Integrated Drive, Protection and System Control Functions
• For IGBTs: Gate drive circuit, Overcurrent circuit protection (OC), Control supply circuit under-voltage (UV) protection
• Fault signaling: Corresponding to a UV fault
• Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input
Pin Configuration
Top View
V
CC
COM
COM
COM
IN
V
FO
C
FOD
C
SC
R
TH
V
TH
N.C.
N.C.
N
N
N
N
NR
NR
NR
NR
P
P
N.C.
L
PR
R
S
Fig. 2.
©2007 Fairchild Semiconductor Corporation
FPAB30BH60 Smart Power Module
(SPM
®
)
Pin Descriptions
Pin Number
1
2,3,4
5
6
7
8
9
10
11,12
13~16
17~20
21,22
23
24
25
26
27
Pin Name
V
CC
COM
IN
(R)
V
FO
C
FOD
C
SC
R
(TH)
V
(TH)
N.C
N
N
R
P
N.C
L
P
R
R
S
Pin Description
Common Bias Voltage for IC and IGBTs Driving
Common Supply Ground
Signal Input for Low-side R-phase IGBT
Fault Output
Capacitor for Fault Output Duration Time Selection
Capacitor (Low-pass Filter) for Over Current Detection
NTC Thermistor terminal
NTC Thermistor terminal
No Connection
IGBT emitter
Negative DC-Link of Rectifier
Positive Rail of DC–Link
No Connection
Reactor connection pin
Positive DC–Link of Rectifier
AC input for R-phase
AC input for S-phase
* 11th and 12th pins are cut. Please refer to package outline drawings for more detail.
Internal Equivalent Circuit and Input/Output Pins
V
TH
R
TH
NTC
Thermistor
P
C
SC
CSC
C
FOD
V
FO
L
CFOD
VFO
IN(S)
COM
VCC
OUT
P
R
IN
COM
VCC
N
N
R
R
S
Fig. 3.
Package Marking & Ordering Information
Device Marking
FPAB30BH60
Device
FPAB30BH60
Package
SPM27-IA
Reel Size
-
Tape Width
-
Quantity
10
©2007 Fairchild Semiconductor Corporation
FPAB30BH60 Smart Power Module
(SPM
®
)
Absolute Maximum Ratings
(T
J
= 25°C,
Converter Part
Item
Supply Voltage
Supply Voltage (Surge)
Output Voltage
Output Voltage (Surge)
Collector-emitter Voltage
Input Current (100% Load)
Input Current (125% Load)
Collector Dissipation
Operating Junction Temperature
Symbol
V
i
V
i(Surge)
V
PN
V
PN(Surge)
V
CES
I
i
I
i(125%)
P
C
T
J
Unless Otherwise Specified)
Condition
Applied between R-S
Applied between R-S
Applied between P- N
Applied between P- N
T
C
< 95°C, V
i
=220V, V
PN
= 390V,
V
PWM
=20kHz
T
C
< 95°C, V
i
=220V, V
PN
= 390V,
V
PWM
=20kHz, 1min Non-repetitive
T
C
= 25°C per One IGBT
(Note 1)
Rating
264
500
450
500
600
25
30
169
-20 ~ 150
Unit
V
RMS
V
V
V
V
A
A
W
°C
Note
1. The maximum junction temperature rating of the power chips integrated within the SPM
®
is 150
°
C(@T
C
≤
100
°
C). However, to insure safe operation of the SPM
®
,
the average junction temperature should be limited to T
J(ave)
≤
125
°
C (@T
C
≤
100
°
C)
Control Part
Item
Control Supply Voltage
Input Signal Voltage
Fault Output Supply Voltage
Fault Output Current
Current Sensing Input Voltage
Symbol
Condition
V
CC
Applied between V
CC
- COM
V
IN
V
FO
I
FO
V
SC
Applied between IN - COM
Applied between V
FO
- COM
Sink Current at V
FO
Pin
Applied between C
SC
- COM
Rating
20
-0.3~5.5
-0.3~V
CC
+0.3
5
-0.3~V
CC
+0.3
Unit
V
V
V
mA
V
Total System
Item
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
Symbol
T
C
T
STG
V
ISO
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to DBC
Condition
Rating
-20 ~ 100
-40 ~ 125
2500
Unit
°C
°C
V
rms
Thermal Resistance
Item
Junction to Case Thermal
Resistance
(Referenced to PKG center)
Symbol
R
θ
(j-c)Q
R
θ
(j-c)F
R
θ
(j-c)R
Condition
IGBT
FRD
Rectifier
Min. Typ.
-
-
-
-
-
-
Max.
0.74
1.44
2.07
Unit
°C/W
°C/W
°C/W
Note :
2. For the measurement point of case temperature(T
C
), please refer to Fig. 2.
©2007 Fairchild Semiconductor Corporation
FPAB30BH60 Smart Power Module
(SPM
®
)
Electrical Characteristics
(T
J
= 25°C, Unless Otherwise Specified)
Converter Part
Item
IGBT saturation voltage
FRD forward voltage
Rectifier forward voltage
Peak surge current
Switching Times
Symbol
V
CE(sat)
V
FF
V
FR
I
FSM
t
ON
t
C(ON)
t
OFF
t
C(OFF)
t
rr
I
rr
Collector - emitter
Leakage Current
I
CES
V
CE
= V
CES
Condition
V
CC
=15V, V
IN
= 5V; I
C
=30A
I
F
= 30A
I
F
= 30A
Non-repetitive, 60Hz single half-sine wave
V
PN
= 400V, V
CC
= 15V, I
C
=30A
V
IN
= 0V
↔
5V, Inductive Load
(Note 3)
Min.
-
-
-
200
-
-
-
-
-
-
-
Typ.
2.0
1.8
1.2
-
650
400
620
200
60
3.5
-
Max.
2.8
2.5
1.5
-
-
-
-
-
-
-
250
Unit
V
V
V
A
ns
ns
ns
ns
ns
A
μA
Note
3. t
ON
and t
OFF
include the propagation delay time of the internal drive IC. t
C(ON)
and t
C(OFF)
are the switching time of IGBT itself under the given gate driving condition
internally. For the detailed information, please see Fig. 4
Control Part
Item
Symbol
Condition
Quiescent V
CC
Supply Cur- I
QCCL
V
CC
= 15V, IN = 0V V
CC
- COM
rent
Fault Output Voltage
Over Current Trip Level
Supply Circuit Under-
Voltage Protection
Fault-out Pulse Width
ON Threshold Voltage
OFF Threshold Voltage
Resistance of Thermistor
V
FOH
V
FOL
V
SC(ref)
UV
CCD
UV
CCR
t
FOD
V
IN(ON)
V
IN(OFF)
R
TH
@ T
C
= 25°C (Note Fig. 9)
@ T
C
= 100°C (Note Fig. 9)
V
SC
= 0V, V
FO
Circuit: 4.7kΩ to 5V Pull-up
V
SC
= 1V, V
FO
Circuit: 4.7kΩ to 5V Pull-up
V
CC
= 15V
Detection Level
Reset Level
C
FOD
= 33nF (Note 4)
Applied between IN - COM
Min.
-
4.5
-
0.45
10.7
11.2
1.4
3.0
-
-
-
Typ.
-
-
-
0.5
11.9
12.4
1.8
-
-
50
2.99
Max.
26
-
0.8
0.55
13.0
13.2
2.0
-
0.8
-
-
Unit
mA
V
V
V
V
V
ms
V
V
kΩ
kΩ
Note
4. The fault-out pulse width t
FOD
depends on the capacitance value of C
FOD
according to the following approximate equation : C
FOD
= 18.3 x 10
-6
x t
FOD
[F]
©2007 Fairchild Semiconductor Corporation
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