KTB985C datasheet, PDF - EEWORLD Datasheet

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KTB985C: DescriptionSmall Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92L, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size366KB，3 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KTB985C Overview

Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92L, 3 PIN

KTB985C Parametric

Parameter Name	Attribute value
Maker	KEC
Parts packaging code	TO-92
package instruction	CYLINDRICAL, R-PBCY-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	200
JEDEC-95 code	TO-92
JESD-30 code	R-PBCY-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	CYLINDRICAL
Polarity/channel type	PNP
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz

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SEMICONDUCTOR

TECHNICAL DATA

VOLTAGE REGULATORS, RELAY DRIVERS

LAMP DRIVERS, ELECTRICAL EQUIPMENT

B

KTB985

EPITAXIAL PLANAR PNP TRANSISTOR

D

FEATURES

・Low

collector-to-emitter saturation voltage.

・Fast

switching speed.

・Large

current capacity and wide ASO.

・Complementary

to KTD1347.

F

C

A

・Adoption

of MBIT processes.

P

DEPTH:0.2

S

Q

K

DIM

A

B

C

D

E

F

G

H

J

K

L

M

N

O

P

Q

R

S

MILLIMETERS

7.20 MAX

5.20 MAX

0.60 MAX

2.50 MAX

1.15 MAX

1.27

1.70 MAX

0.55 MAX

_

14.00 + 0.50

0.35 MIN

_

0.75 + 0.10

4

G

J

F

H

M

E

M

R

H

MAXIMUM RATING (Ta=25℃)

O

CHARACTERISTIC

Collector-Base Voltage

Vollector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Current (Pulse)

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

I

CP

P

C

T

j

T

stg

RATING

-60

-50

-6

-3

-6

1

150

-55½150

UNIT

V

A

W

℃

1

N

2

3

N

H

L

1. EMITTER

2. COLLECTOR

3. BASE

25

1.25

Φ1.50

0.10 MAX

_

12.50 + 0.50

1.00

TO-92L

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

h

FE

(2)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

Collector Output Capacitance

Turn-on Time

Switching

Time

V

CE(sat)

V

BE(sat)

f

T

C

ob

t

on

V

CE

=-2V, I

C

=-3A

I

C

=-2A, I

B

=-100㎃

I

C

=-2A, I

B

=-100㎃

V

CE

=-10V, I

C

=-50㎃

V

CB

=-10V, I

E

=0, f=1㎒

PW=20µs

DC

<

1%

=

INPUT

VR

I B1

R8

IB2

50

100µF

470µF

-25V

25

SYMBOL

I

CBO

I

EBO

h

FE

(1) (Note)

TEST CONDITION

V

CB

=-40V, I

E

=0

V

EB

=-4V, I

C

=0

V

CE

=-2V, I

C

=-100㎃

MIN.

-

100

35

-

D

TYP.

-

-0.35

-0.94

150

39

70

MAX.

-1

400

-

-0.7

-1.2

-

UNIT.

㎂

V

㎒

㎊

Storage Time

t

stg

-

450

-

nS

Fall Time

t

f

5V

-10I

B

1=10I

B2

=I

C

=1A

-

35

-

Note : h

FE

(1) Classification A:100½200, B:140½280, C:200½400

1999. 11. 30

Revision No : 1

1/3

KTB985C Related Products

	KTB985C	KTB985A	KTB985B
Description	Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92L, 3 PIN	Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92L, 3 PIN	Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92L, 3 PIN
Maker	KEC	KEC	KEC
Parts packaging code	TO-92	TO-92	TO-92
package instruction	CYLINDRICAL, R-PBCY-T3	CYLINDRICAL, R-PBCY-T3	CYLINDRICAL, R-PBCY-T3
Contacts	3	3	3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	3 A	3 A	3 A
Collector-emitter maximum voltage	50 V	50 V	50 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	200	100	140
JEDEC-95 code	TO-92	TO-92	TO-92
JESD-30 code	R-PBCY-T3	R-PBCY-T3	R-PBCY-T3
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP	PNP
Maximum power dissipation(Abs)	1 W	1 W	1 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz	150 MHz

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