SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
・Excellent
h
FE
Linearity
: h
FE
(0.1mA)/h
FE
(2mA)=0.95(Typ.).
A
KTA1504S
EPITAXIAL PLANAR PNP TRANSISTOR
L
E
B
L
・Complementary
to KTC3875S.
G
・Low
Noise : NF=1dB(Typ.), 10dB(Max.).
2
H
3
1
Q
P
P
K
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
-50
-50
-5
-150
-30
150
150
-55½150
UNIT
V
M
1. EMITTER
V
V
mA
mA
mW
℃
℃
2. BASE
3. COLLECTOR
SOT-23
Marking
h
FE
Rank
Lot No.
Type Name
AS
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
SYMBOL
I
CBO
I
EBO
h
FE
(Note)
V
CE(sat)
f
T
C
ob
NF
TEST CONDITION
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-6V, I
C
=-2mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-10V, I
C
=-1mA
V
CB
=-10V, I
E
=0, f=1MHz
V
CE
=-6V, I
C
=-0.1mA
f=1kHz, Rg=10kΩ
Note : h
FE
Classification O:70½140 , Y:120½240 , GR(G):200½400
MIN.
-
-
70
-
80
-
-
TYP.
-
-
-
-0.1
-
4.0
1.0
MAX.
-0.1
-0.1
400
-0.3
-
7.0
10
V
MHz
pF
dB
UNIT
μ
A
μ
A
2007. 6. 13
Revision No : 3
J
MAXIMUM RATING (Ta=25℃)
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
Q
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
0.1 MAX
C
N
D
1/3
KTA1504S
SAFE OPERATING AREA
COLLECTOR CURRENT I
C
(mA)
-1000
I
C
MAX(PULSE)*
-100
I
C
MAX(CONTINUOUS)
DC OPERATION(Ta=25 C)
1mS*
10mS*
-10
*SINGLE NONREPETITIVE PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN TEMPERATURE
-1
-0.1
-1
-10
-100
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
2007. 6. 13
Revision No : 3
3/3