SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
・Excellent
h
FE
Linearity
: h
FE
(2)=25(Min.) at V
CE
=-6V, I
C
=-400mA.
A
KTA1505S
EPITAXIAL PLANAR PNP TRANSISTOR
L
E
B
L
・Suffix
U : Qualified to AEC-Q101
ex) KTA1505S-RTK/HU
Q
G
・Complementary
to KTC3876S.
2
H
3
1
P
P
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
Q
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
0.1 MAX
C
N
M
℃
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
-35
-30
-5
-500
-50
150
150
-55½150
UNIT
V
V
V
mA
mA
mW
℃
℃
Type Name
Marking
h
FE
Rank
Lot No.
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
(Note) : h
FE
(1) Classification
h
FE
(2) Classification
O:70½140
O:25Min.
SYMBOL
I
CBO
I
EBO
h
FE
(1)
h
FE
(2)
V
CE(sat)
V
BE
f
T
C
ob
Y:120½240
Y:40Min.
TEST CONDITION
V
CB
=-35V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-1V, I
C
=-100mA
V
CE
=-6V, I
C
=-400mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-1V, I
C
=-100mA
V
CE
=-6V, I
C
=-20mA
V
CB
=-6V, I
E
=0, f=1MHz
GR:200½400
MIN.
-
-
70
25
-
-
-
-
TYP.
-
-
-
-
-0.1
-0.8
200
13
MAX.
-0.1
-0.1
400
-
-0.25
-1.0
-
-
V
V
MHz
pF
UNIT
μ
A
μ
A
2018. 04. 10
Revision No : 5
K
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
AZ
J
D
1/2
KTA1505S
I
C
- V
CE
(LOW VOLTAGE REGION)
-600
COLLECTOR CURRENT I
C
(mA)
-500
-400
-300
-200
-100
0
0
-8 -7 -6
-5
-4
-3
-2
I
B
=-1mA
h
FE
- I
C
1k
DC CURRENT GAIN h
FE
COMMON EMITTER
COMMON
EMITTER
Ta=25 C
500
300
Ta=100 C
V
CE
=-6V
100
50
30
Ta=25 C
Ta=-25 C
V
CE
=-1V
0
-1
-2
-3
-4
-5
10
-0.2
-1
-3
-10
-30
-100
-300
-1k
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(mA)
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
-3
-1
-0.5
-0.3
-0.1
-0.05
-0.03
-0.01
-0.5 -1
Ta=100 C
Ta=25 C
Ta=-25 C
COMMON EMITTER
I
C
/I
B
=10
I
B
- V
BE
-3k
BASE CURRENT I
B
(μA)
-1k
-300
-100
-30
-10
-3
-1
-0.3
Ta=2
5 C
Ta=-2
5 C
Ta=1
00 C
COMMON
EMITTER
V
CE
=-6V
-3
-10
-30
-100
-300
-1k
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
COLLECTOR CURRENT I
C
(mA)
BASE-EMITTER VOLTAGE V
BE
(V)
P
C
- Ta
COLLECTOR POWER DISSIPATION
P
C
(mW)
300
200
100
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE Ta ( C)
2018. 04. 10
Revision No : 5
2/2
Integrated technical exchanges
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