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SMCJ33A

Description
Trans Voltage Suppressor Diode, 1500W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size35KB,5 Pages
ManufacturerRectron
Environmental Compliance  
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SMCJ33A Overview

Trans Voltage Suppressor Diode, 1500W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC PACKAGE-2

SMCJ33A Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRectron
Parts packaging codeDO-214AB
package instructionR-PDSO-C2
Contacts2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum breakdown voltage40.6 V
Minimum breakdown voltage36.7 V
Breakdown voltage nominal value38.7 V
Maximum clamping voltage53.3 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AB
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)265
polarityUNIDIRECTIONAL
Maximum power dissipation5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage33 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
TVS
TFMCJ
SERIES
SURFACE MOUNT GPP
TRANSIENT VOLTAGE SUPPRESSOR
1500 WATT PEAK POWER 5.0 WATTS STEADY STATE
FEATURES
*
*
*
*
*
*
Plastic package has underwriters laboratory
Glass passivated chip construction
1500 watt surage capability at 1ms
Excellent clamping capability
Low zener impedance
Fast response time
0.125 (3.17)
0.115 (2.92)
DO-214AB
0.245 (6.22)
0.220 (5.59)
0.280 (7.11)
0.260 (6.60)
Ratings at 25
o
C ambient temperature unless otherwise specified.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.320 (8.13)
0.305 (7.75)
0.012 (0.305)
0.006 (0.152)
0.008 (0.203)
0.004 (0.102)
Dimensions in inches and (millimeters)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA suffix for types TFMCJ5.0 thru TFMCJ170
Electrical characteristics apply in both direction
MAXIMUM RATINGS
(At T
A
= 25 C unless otherwise noted)
RATINGS
Peak Power Dissipation with a 10/1000uS (Note 1,2, Fig.1)
Peak Pulse Current with a 10/1000uS waveform ( Note 1, Fig.3 )
Steady State Power Dissipation at T
L
= 75 C (Note 2)
Peak Forward Surge Current 8.3mS single half sine-wave
superimposed on rated load (JEDEC method) (Note 2,3)
unidirectional only
Maximum Instantaneous Forward Voltage at 100A for unidirectional
only (Note 3,4)
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient Air
Thermal Resistance Junction to Leads
NOTES :
o
o
SYMBOL
P
PPM
I
PPM
P
M
(
AV
)
I
FSM
VALUE
Minimum 1500
SEE TABLE 1
5.0
200
UNITS
Watts
Amps
Watts
Amps
V
F
T
J
, T
STG
R
θ
JA
R
θ
JL
SEE NOTE 3,4
-55 to + 150
75
15
Volts
0
0
0
C
C/W
C/W
2005-9
REV:A
1. Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25
o
C per Fig.2.
2. Mounted on 0.31 X 0.31”( 8.0 X 8.0mm) copper pad to each terminal.
o
3. Lead temperature at T
L
= 25 C
4. Measured on 8.3mS single half sine-wave duty cycle = 4 pules per minute maximum.
5. V
F
= 3.5V on TFMCJ-5.0 thru TFMCJ-90 devices and V
F
= 5.0V on TFMCJ-100 thru TFMCJ-170 devices.
6”Fully ROHS compliant”,”100% Sn plating(Pb-free).

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