SEMICONDUCTOR
TECHNICAL DATA
CONSTANT VOLTAGE REGULATION APPLICATION.
REFERENCE VOLTAGE APPLICATION.
FEATURES
・Small
Package : VSC
・Sharp
Breakdown Characteristic.
・Normal
Voltage Tolerance about
±6%.
2
KDZ2.0VV~36VV
ZENER DIODE
SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
1
D
C
B
A
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
P
D
*
T
j
T
stg
RATING
100
150
-55½150
UNIT
mW
E
DIM
A
B
C
D
E
F
MILLIMETERS
_
1.4 + 0.05
_
1.0 + 0.05
_
0.6 + 0.05
_
0.28 + 0.03
_
0.5 + 0.05
_
0.12 + 0.03
℃
℃
F
* Mounted on a glass epoxy circuit board of 20×20㎜,
pad dimension of 4×4㎜.
VSC
Type No.
**KDZ2.0VV
**KDZ2.2VV
**KDZ2.4VV
**KDZ2.7VV
**KDZ3.0VV
**KDZ3.3VV
**KDZ3.6VV
**KDZ3.9VV
Marking
-
ZA
ZB
ZC
ZD
ZE
ZF
ZG
ZH
Y
AY
BY
CY
DY
EY
FY
GY
HY
Type No.
KDZ4.3VV
KDZ4.7VV
KDZ5.1VV
KDZ5.6VV
KDZ6.2VV
KDZ6.8VV
KDZ7.5VV
KDZ8.2VV
Marking
-
ZJ
ZK
ZL
ZM
ZN
ZP
ZQ
ZR
Y
JY
KY
LY
MY
NY
PY
QY
RY
Type No.
KDZ9.1VV
KDZ10VV
KDZ11VV
KDZ12VV
KDZ13VV
KDZ15VV
KDZ16VV
KDZ18VV
Marking
-
ZS
10
11
12
13
15
16
18
Y
SY
0Y
1Y
2Y
3Y
5Y
6Y
8Y
Type No.
KDZ20VV
KDZ22VV
KDZ24VV
KDZ27VV
KDZ30VV
KDZ33VV
KDZ36VV
-
Marking
-
20
22
24
27
30
33
36
-
Y
4Y
7Y
9Y
TY
UY
VY
WY
-
**Under development
2010. 9. 1
Revision No : 2
1/4
KDZ2.0VV~36VV
I
Z
- V
Z
KDZ2.4VV
KDZ3.0VV
KDZ3.6VV
KDZ4.3VV
KDZ5.1VV
KDZ6.2VV
KDZ6.8VV
KDZ7.5VV
KDZ8.2VV
KDZ9.1VV
KDZ10VV
KDZ11VV
KDZ12VV
KDZ13VV
KDZ15VV
KDZ16VV
P
D
- Ta
POWER DISSIPATION P
D
(mW)
200
* MOUNTED ON A GLASS
EPOXY CIRCUIT BOARD
OF 20x20mm
PAD DIMENSION
OF 4x4mm
10
ZENER CURRENT I
Z
(mA)
8
6
KDZ2.0VV
KDZ18VV
KDZ20VV
KDZ22VV
KDZ24VV
KDZ27VV
KDZ30VV
150
100
KDZ33VV
KDZ36VV
4
2
0
0
50
0
0
50
100
150
200
4
8
12 16 20 24 28 30 32 34 36 38
ZENER VOLTAGE V
Z
(V)
AMBIENT TEMPERATURE Ta ( C)
γ
Z
- V
Z
TEMPERATURE COEFFICIENT OF
ZENER VOLTAGE
γ
Z
(%/ C)
TEMPERATURE COEFFICIENT OF
ZENER VOLTAGE
γ
Z
(mV/ C)
0.12
0.08
0.04
0.5mA
30
20
%/ C
mV/ C
5mA
10
I
Z
=0.5mA
5
0
-0.04
0
-10
0.5
-0.08
1
-20
5
3
5
10
30
ZENER VOLTAGE V
Z
(V)
2010. 9. 1
Revision No : 2
4/4