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IS62WV12816ALL-70BLI

Description
Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, MINI, BGA-48
Categorystorage    storage   
File Size512KB,17 Pages
ManufacturerIntegrated Silicon Solution ( ISSI )
Environmental Compliance  
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IS62WV12816ALL-70BLI Overview

Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, MINI, BGA-48

IS62WV12816ALL-70BLI Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerIntegrated Silicon Solution ( ISSI )
Parts packaging codeDSBGA
package instructionTFBGA, BGA48,6X8,30
Contacts48
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Factory Lead Time8 weeks
Maximum access time70 ns
I/O typeCOMMON
JESD-30 codeR-PBGA-B48
JESD-609 codee1
length8 mm
memory density2097152 bit
Memory IC TypeSTANDARD SRAM
memory width16
Humidity sensitivity level3
Number of functions1
Number of terminals48
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128KX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA48,6X8,30
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply1.8/2 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum standby current0.00001 A
Minimum standby current1 V
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)2.2 V
Minimum supply voltage (Vsup)1.65 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
width6 mm
IS62WV12816ALL
IS62WV12816BLL
FEATURES
128K x 16 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
• High-speed access time: 45ns, 55ns, 70ns
• CMOS low power operation
– 36 mW (typical) operating
– 9 µW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply
– 1.65V--2.2V V
dd
(62WV12816ALL)
– 2.5V--3.6V V
dd
(62WV12816BLL)
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• 2CS Option Available
• Lead-free available
NOVEMBER 2013
DESCRIPTION
The
ISSI
IS62WV12816ALL/ IS62WV12816BLL are high-
speed, 2M bit static RAMs organized as 128K words by
16 bits. It is fabricated using
ISSI
's high-performance
CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields high-
performance and low power consumption devices.
When
CS1
is HIGH (deselected) or when CS2 is LOW
(deselected) or when
CS1
is
LOW,
CS2 is
HIGH
and both
LB
and
UB
are HIGH, the device assumes a standby mode
at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE)
controls both writing and reading of the memory. A
data byte allows Upper Byte
(UB)
and Lower Byte (LB)
access.
The IS62WV12816ALL and IS62WV12816BLL are
packaged in the JEDEC standard 48-pin mini BGA (6mm
x 8mm) and 44-Pin TSOP (TYPE II).
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128K x 16
MEMORY ARRAY
VDD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CS2
CS1
OE
WE
UB
LB
CONTROL
CIRCUIT
Copyright © 2013 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest
version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. J
11/19/2013
1

IS62WV12816ALL-70BLI Related Products

IS62WV12816ALL-70BLI IS62WV12816BLL-55TI IS62WV12816BLL-55T IS62WV12816BLL-55BI IS62WV12816BLL-55B2LI IS62WV12816ALL-70BI IS62WV12816BLL-45TLI
Description Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, MINI, BGA-48 128KX16 STANDARD SRAM, 55ns, PDSO44, 0.400 INCH, TSOP2-44 128KX16 STANDARD SRAM, 55ns, PDSO44, 0.400 INCH, TSOP2-44 Standard SRAM, 128KX16, 55ns, CMOS, PBGA48, 6 X 8 MM, MO-207, MINI, BGA-48 Standard SRAM, 128KX16, 55ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, MINI, BGA-48 Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MO-207, MINI, BGA-48 Standard SRAM, 128KX16, 45ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44
Is it lead-free? Lead free Contains lead Contains lead Contains lead Lead free Contains lead Lead free
Is it Rohs certified? conform to incompatible incompatible incompatible conform to incompatible conform to
Maker Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI )
Parts packaging code DSBGA TSOP2 TSOP2 DSBGA DSBGA DSBGA TSOP2
package instruction TFBGA, BGA48,6X8,30 0.400 INCH, TSOP2-44 0.400 INCH, TSOP2-44 TFBGA, BGA48,6X8,30 TFBGA, BGA48,6X8,30 TFBGA, BGA48,6X8,30 TSOP2, TSOP44,.46,32
Contacts 48 44 44 48 48 48 44
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Maximum access time 70 ns 55 ns 55 ns 55 ns 55 ns 70 ns 45 ns
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-PBGA-B48 R-PDSO-G44 R-PDSO-G44 R-PBGA-B48 R-PBGA-B48 R-PBGA-B48 R-PDSO-G44
JESD-609 code e1 e0 e0 e0 e1 e0 e3
length 8 mm 18.41 mm 18.41 mm 8 mm 8 mm 8 mm 18.41 mm
memory density 2097152 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 16 16 16 16 16 16 16
Humidity sensitivity level 3 3 3 3 3 3 3
Number of functions 1 1 1 1 1 1 1
Number of terminals 48 44 44 48 48 48 44
word count 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words
character code 128000 128000 128000 128000 128000 128000 128000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 85 °C 85 °C 70 °C 85 °C 85 °C 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C - -40 °C -40 °C -40 °C -40 °C
organize 128KX16 128KX16 128KX16 128KX16 128KX16 128KX16 128KX16
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TFBGA TSOP2 TSOP2 TFBGA TFBGA TFBGA TSOP2
Encapsulate equivalent code BGA48,6X8,30 TSOP44,.46,32 TSOP44,.46,32 BGA48,6X8,30 BGA48,6X8,30 BGA48,6X8,30 TSOP44,.46,32
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, THIN PROFILE, FINE PITCH SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH SMALL OUTLINE, THIN PROFILE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED 260 NOT SPECIFIED 260
power supply 1.8/2 V 3/3.3 V 3/3.3 V 3/3.3 V 2.7/3.3 V 1.8/2 V 3/3.3 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm
Minimum standby current 1 V 1 V 1 V 1 V 1 V 1 V 1 V
Maximum slew rate 0.02 mA 0.03 mA 0.025 mA 0.03 mA 0.03 mA 0.02 mA 0.04 mA
Maximum supply voltage (Vsup) 2.2 V 3.6 V 3.6 V 3.6 V 3.6 V 2.2 V 3.6 V
Minimum supply voltage (Vsup) 1.65 V 2.5 V 2.5 V 2.5 V 2.5 V 1.65 V 2.5 V
Nominal supply voltage (Vsup) 1.8 V 3 V 3 V 3 V 3 V 1.8 V 3 V
surface mount YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL INDUSTRIAL COMMERCIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Lead (Sn/Pb) Matte Tin (Sn)
Terminal form BALL GULL WING GULL WING BALL BALL BALL GULL WING
Terminal pitch 0.75 mm 0.8 mm 0.8 mm 0.75 mm 0.75 mm 0.75 mm 0.8 mm
Terminal location BOTTOM DUAL DUAL BOTTOM BOTTOM BOTTOM DUAL
Maximum time at peak reflow temperature 40 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED 40 NOT SPECIFIED 40
width 6 mm 10.16 mm 10.16 mm 6 mm 6 mm 6 mm 10.16 mm
Factory Lead Time 8 weeks 10 weeks 10 weeks - 8 weeks 8 weeks 8 weeks
Maximum standby current 0.00001 A 0.00001 A 0.00001 A 0.00001 A - 0.00001 A 0.00001 A
Base Number Matches - 1 1 1 1 1 -
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