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RJK1560DPP-M0-T2

Description
Silicon N Channel MOS FET High Speed Power Switching
File Size87KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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RJK1560DPP-M0-T2 Overview

Silicon N Channel MOS FET High Speed Power Switching

Preliminary
Datasheet
RJK1560DPP-M0
Silicon N Channel MOS FET
High Speed Power Switching
Features
Capable of 2.5 V gate drive
Low on-resistance
R
DS(on)
= 0.043
typ. (at I
D
= 10 A, V
GS
= 4 V, Ta = 25C)
Low leakage current
High speed switching
R07DS0270EJ0100
Rev.1.00
Mar 07, 2011
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
D
G
1. Gate
2. Drain
3. Source
1
2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
3. STch = 25C, Tch
150C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
AP Note3
E
AR Note3
Pch
Note2
ch-c
Tch
Tstg
Ratings
150
±10
20
80
20
80
16
19.2
28.5
4.38
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0270EJ0100 Rev.1.00
Mar 07, 2011
Page 1 of 6

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