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SFF240J

Description
N-Channel Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size140KB,4 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
Download Datasheet Parametric Compare View All

SFF240J Overview

N-Channel Power MOSFET

SFF240J Parametric

Parameter NameAttribute value
MakerSSDI
Parts packaging codeTO-257AB
package instructionFLANGE MOUNT, S-XSFM-P3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)450 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)15 A
Maximum drain-source on-resistance0.25 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-257AB
JESD-30 codeS-XSFM-P3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFF240J
SFF240JR
15 AMP, 200 Volts, 0.18
N-Channel Power MOSFET
Screening
2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SFF240 ___ ___
____
Features:
Rugged construction with polysilicon gate
Low RDS(on) and high transconductance
Excellent high temperature stability
Very fast switching speed
Fast recovery and superior dv/dt performance
Increased reverse energy capability
Low input and transfer capacitance for easy
paralleling
Ceramic seals for improved hermeticity
Hermetically sealed package
TX, TXV, S-Level screening available
Replaces: IRFY240 and 2N7219 Types
Pin Configuration
__ = Normal
R = Reverse
Package
3/
J = TO-257
Maximum Ratings
Drain - Source Voltage
Gate - Source Voltage
Max. Continuous Drain Current (package
limited) @ 25ºC
Max. Instantaneous Drain Current (Tj limited)
T
C
= 25ºC
Max. Avalanche current
Single Pulse Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
NOTES:
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Maximum current limited by package configuration
4/ Unless otherwise specified, all electrical characteristics @25
o
C.
Symbol
V
DS
continuous
transient
V
GS
I
D1
I
D2
@ L = 0.1 mH
@ L = 0.1 mH
@ T
C
= 25ºC
@ T
C
= 55ºC
I
AS
E
AS
P
D
T
OP
& T
STG
R
θJC
Value
200
±20
±30
15
16
15
450
63
48
-55 to +150
2
TO-257
Units
V
V
A
A
A
mJ
W
ºC
ºC/W
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00111B
DOC

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