UVPROM, 128KX8, 35ns, CMOS, CDIP32, CERAMIC, DIP-32
| Parameter Name | Attribute value |
| Maker | Cypress Semiconductor |
| Parts packaging code | DIP |
| package instruction | DIP, DIP32,.6 |
| Contacts | 32 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum access time | 35 ns |
| I/O type | COMMON |
| JESD-30 code | R-GDIP-T32 |
| JESD-609 code | e0 |
| memory density | 1048576 bit |
| Memory IC Type | UVPROM |
| memory width | 8 |
| Number of functions | 1 |
| Number of terminals | 32 |
| word count | 131072 words |
| character code | 128000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 128KX8 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC, GLASS-SEALED |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP32,.6 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| power supply | 5 V |
| Certification status | Not Qualified |
| Filter level | MIL-PRF-38535 Class Q |
| Maximum standby current | 0.025 A |
| Maximum slew rate | 0.06 mA |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | TIN LEAD |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| 5962-8961416QXX | 5962-8961416QXA | 5962-8961416QYX | |
|---|---|---|---|
| Description | UVPROM, 128KX8, 35ns, CMOS, CDIP32, CERAMIC, DIP-32 | UVPROM, 128KX8, 35ns, CMOS, CDIP32, CERAMIC, DIP-32 | UVPROM, 128KX8, 35ns, CMOS, CQCC32, CERAMIC, LCC-32 |
| Maker | Cypress Semiconductor | Cypress Semiconductor | Cypress Semiconductor |
| Parts packaging code | DIP | DIP | QFJ |
| package instruction | DIP, DIP32,.6 | DIP, | QCCN, LCC32,.45X.55 |
| Contacts | 32 | 32 | 32 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Maximum access time | 35 ns | 35 ns | 35 ns |
| JESD-30 code | R-GDIP-T32 | R-GDIP-T32 | R-CQCC-N32 |
| JESD-609 code | e0 | e0 | e0 |
| memory density | 1048576 bit | 1048576 bit | 1048576 bit |
| Memory IC Type | UVPROM | UVPROM | UVPROM |
| memory width | 8 | 8 | 8 |
| Number of functions | 1 | 1 | 1 |
| Number of terminals | 32 | 32 | 32 |
| word count | 131072 words | 131072 words | 131072 words |
| character code | 128000 | 128000 | 128000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -55 °C | -55 °C | -55 °C |
| organize | 128KX8 | 128KX8 | 128KX8 |
| Package body material | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED |
| encapsulated code | DIP | DIP | QCCN |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | CHIP CARRIER |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| Filter level | MIL-PRF-38535 Class Q | MIL-PRF-38535 Class Q | MIL-PRF-38535 Class Q |
| Maximum supply voltage (Vsup) | 5.5 V | 5.5 V | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V | 4.5 V | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V |
| surface mount | NO | NO | YES |
| technology | CMOS | CMOS | CMOS |
| Temperature level | MILITARY | MILITARY | MILITARY |
| Terminal surface | TIN LEAD | TIN LEAD | TIN LEAD |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | NO LEAD |
| Terminal location | DUAL | DUAL | QUAD |
| I/O type | COMMON | - | COMMON |
| Output characteristics | 3-STATE | - | 3-STATE |
| Encapsulate equivalent code | DIP32,.6 | - | LCC32,.45X.55 |
| power supply | 5 V | - | 5 V |
| Maximum standby current | 0.025 A | - | 0.025 A |
| Maximum slew rate | 0.06 mA | - | 0.06 mA |
| Terminal pitch | 2.54 mm | - | 1.27 mm |
京公网安备 11010802033920号
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