Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
2N5015
0.5 AMP, 1000 Volts
NPN Transistor
FEATURES:
BVCER 1000 volts
Low Saturation Voltage
Low Leakage at High Temperature
High Gain, Low Saturation
200° C Operating, Gold Eutectic Die Attach
TX, TXV, and S-Level Screening Available
Symbol
Value
Units
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
2N50
15
│
│
│
│
│
│
│
│
└
Screening
2/
__
= Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Package
/39 = TO-39
/5 = TO-5
1000V
Family / Voltage
__
│
│
│
│
│
└
__
└
Maximum Ratings
Collector – Emitter Voltage
(R
BE
= 1 kΩ)
Collector – Base Voltage
Emitter – Base Voltage
Collector – Emitter Breakdown Voltage
Peak Collector Current
Peak Base Current
Total Device Dissipation
@ T
C
= 100º C
Derate above 100º C
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Notes:
1/ For ordering information, price, operating curves, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, maximum ratings/electrical characteristics at 25°C.
4/ Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%
V
CER
V
CBO
V
EBO
BV
CEO
I
C
I
B
P
D
T
OP
, T
STG
R
θJC
TO-39
1000
1000
5
450
0.5
250
2.0
20
-65 to +200
50 (typ 22)
V
V
V
V
A
mA
W
mW/ºC
ºC
ºC/W
TO-5
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0043E
DOC
2N5015
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristic
3/
Collector – Emitter Breakdown Voltage
(I
C
= 200 µA
DC
, R
BE
= 1 KΩ)
Collector–Base Breakdown Voltage
(I
C
= 200 µA
DC
)
Emitter–Base Breakdown Voltage
(I
E
= 50 µA
DC
)
Collector Cutoff Current
(V
CB
= 760 V)
(V
CB
= 760 V, T
C
= 100°C)
Emitter Cutoff Current
(V
EB
= 4V)
DC Current Gain
4/
(I
C
= 20 mA
DC
, V
CE
= 10 V
DC
)
Collector – Emitter Saturation Voltage
4/
(I
C
= 20 mA
DC
, I
B
= 5 mA
DC
)
Base – Emitter Saturation Voltage
4/
(I
C
= 20 mA
DC
, I
B
= 5 mA
DC
)
Current Gain Bandwidth Product
(I
C
= 20 mA
DC
, V
CE
= 10 V
DC
, f = 20 MHz)
Output Capacitance
(V
CB
= 10 V
DC
, I
E
= 0 A
DC
, f = 1.0 MHz)
Symbol
BV
CER
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(Sat)
V
BE(Sat)
f
T
Cob
V
CC
= 125 V
DC
,
I
C
= 100 mA
DC
,
I
B1
= 20 mA
DC
I
B2
= 20 mA
DC
pw= 2 us
td
tr
ts
tf
Min
1000
1000
5
––
––
—
10
30
––
––
20
––
––
––
––
––
Typ
1300
-
7
0.08
6
0.003
70
80
0.07
0.7
25
12.5
50
100
1500
450
Max
––
––
––
12
100
20
180
1.8
1.0
––
30
200
1200
3000
800
Units
V
V
V
µAdc
µA
––
Vdc
Vdc
MHz
pF
(I
C
= 5 mA
DC
, V
CE
= 10 V
DC
)
Delay Time
Rise Time
Storage Time
Fall Time
nsec
Case Outline: TO-39
PIN 1: EMITTER
PIN 2: BASE
PIN 3: COLLECTOR
Case Outline: TO-5
PIN 1: EMITTER
PIN 2: BASE
PIN 3: COLLECTOR
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0043E
DOC
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