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3KP150A

Description
3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size375KB,3 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Download Datasheet Parametric View All

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3KP150A Overview

3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE

3KP150A Parametric

Parameter NameAttribute value
MakerSEMIKRON
package instructionO-PALF-W2
Contacts2
Manufacturer packaging codeCASE P-600
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum breakdown voltage185 V
Minimum breakdown voltage167 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak reverse power dissipation3000 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-50 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation8 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage150 V
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
3 KP 130 ... 3 KP 180CA
Absolute Maximum Ratings
Symbol Conditions
Values
Units
Axial lead diode
Unidirectional and
bidirectional Transient
Voltage Suppressor
diodes
3 KP 130 ... 3 KP 180CA
Pulse Power
Dissipation: 3000 W
Stand-off
voltage: 130 ... 180 V
Features
Dimensions in mm
Mechanical Data
1)
2)
3)
1
23-10-2009 MAM
© by SEMIKRON
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