Smart Low Side Power Switch
HITFET BTS 3410G
Features
·
Logic Level Input
·
Input Protection (ESD)
·
Thermal shutdown with
auto restart
•
Green product (RoHS compliant)
·
Overload protection
·
Short circuit protection
·
Overvoltage protection
·
Current limitation
·
Analog driving possible
Product Summary
Drain source voltage
On-state resistance
Nominal load current
Clamping energy
V
DS
R
DS(on)
I
D(Nom)
E
AS
42
200
1.3
150
V
mW
A
mJ
Application
·
All kinds of resistive, inductive and capacitive loads in switching
or linear applications
·
µC compatible power switch for 12 V DC applications
·
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS
Ò
technology. Fully protected by embedded
protection functions.
V
bb
M
HITFET
â
In1
Pin 2
Drain1
Pin 7and 8
Logic
Channel 1
Pin 1
Source1
Drain2
Pin 5and 6
In2
Pin 4
Logic
Channel 2
Source2
Pin 3
Complete product spectrum and additional information http://www.infineon.com/hitfet
Datasheet
1
Rev. 1.3, 2007-11-06
Smart Low Side Power Switch
HITFET BTS 3410G
Pin Description
Pin
1
2
3
4
5
6
7
8
Symbol
S1
IN1
S2
IN2
D2
D2
D1
D1
Function
Source Channel 1
Input Channel 1
Source Channel 2
Input Channel 2
Drain Channel 2
Drain Channel 2
Drain Channel 1
Drain Channel 1
Pin Configuration (Top view)
S1
IN1
S2
IN2
1·
2
3
4
8
7
6
5
D1
D1
D2
D2
PG- DSO-8-25
HITFET
â
Drain1
Pin 7, 8
Current
Limitation
Overvoltage-
Protection
Vbb
In1
Pin 2
Gate-Driving Unit
M
ESD
Overload
Protection
Over- temperature
Protection
Short circuit Protection
Pin 1
Source1
Drain2
Pin 5, 6
Current
Limitation
Overvoltage-
Protection
Vbb
In2
Pin 4
Gate-Driving Unit
M
ESD
Overload
Protection
Over- temperature
Protection
Short circuit Protection
Pin 3
Source2
Datasheet
2
Rev. 1.3, 2007-11-06
Smart Low Side Power Switch
HITFET BTS 3410G
Maximum Ratings at T
j
= 25°C, unless otherwise specified
Parameter
Symbol
Drain source voltage
Drain source voltage for short circuit protection
1)
T
j
= -40...150 °C
Continuous input current
1)
-0.2V
£
V
IN
£
10V
V
IN
< -0.2V or
V
IN
> 10V
Operating temperature
Storage temperature
Power dissipation
2)5)
T
A
= 85 °C
Unclamped single pulse inductive energy
1)
each channel
Load dump protection
V
LoadDump1)3)
=
V
A
+
V
S
V
IN
= 0 and 10 V, t
d
= 400 ms,
R
I
= 2
W,
R
L
= 9
W,
V
A
= 13.5 V
Electrostatic discharge
voltage
1)
according to Jedec norm
EIA/JESD22-A114-B, Section 4
(Human Body Model)
Value
42
18
Unit
V
V
DS
V
DS(SC)
I
IN
mA
no limit
|
I
IN
|
£
2
T
j
T
stg
P
tot
E
AS
V
LD
-40 ...+150
-55 ... +150
0.8
150
50
°C
W
mJ
V
V
ESD
2
kV
Thermal resistance
junction - ambient:
per channel
one channel on
both channels on
R
thJA
100
160
K/W
@ 6 cm
2
cooling area
2)
1not subject to production test, specified by design
2 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.
3
V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5 not subject to production test, calculated by R
THJA and Rds(on)
Datasheet
3
Rev. 1.3, 2007-11-06
Smart Low Side Power Switch
HITFET BTS 3410G
Electrical Characteristics
Parameter
at
T
j
= 25°C, unless otherwise specified
Characteristics
Drain source clamp voltage
T
j
= - 40 ...+ 150,
I
D
= 10 mA
Off-state drain current
T
j
= -40 ... +150°C
V
DS
= 32 V,
V
IN
= 0 V
Input threshold voltage
I
D
= 0.3 mA,
T
j
= 25 °C
I
D
= 0.3 mA,
T
j
= 150 °C
On state input current
On-state resistance
V
IN
= 5 V,
I
D
= 1.4 A,
T
j
= 25 °C
V
IN
= 5 V,
I
D
= 1.4 A,
T
j
= 150 °C
On-state resistance
V
IN
= 10 V,
I
D
= 1.4 A,
T
j
= 25 °C
V
IN
= 10 V,
I
D
= 1.4 A,
T
j
= 150 °C
Nominal load current per channel
5)
V
DS
= 0.5 V,
T
j
< 150°C,
V
IN
= 10 V,
T
A
= 85 °C,
one channel on
both channels on
Current limit (active if
V
DS
>2.5 V)
2)
V
IN
= 10 V,
V
DS
= 12 V,
t
m
= 200 µs
I
D(lim)
1.3
1
5
1.65
1.3
7.5
-
-
10
I
D(Nom)
R
DS(on)
-
-
150
280
200
400
A
I
IN(on)
R
DS(on)
-
-
190
350
240
480
V
IN(th)
1.3
0.8
-
1.7
-
10
2.2
-
30
µA
mW
V
V
DS(AZ)
I
DSS
Symbol
min.
42
-
Values
typ.
-
1.5
max.
55
10
V
µA
Unit
1not subject to production test, specified by design
2Device switched on into existing short circuit (see diagram Determination of I
D(lim) ). If the device is in on cond
and a short circuit occurs, these values might be exceeded for max. 50 µs.
5 not subject to production test, calculated by R
THJA and Rds(on)
Datasheet
4
Rev. 1.3, 2007-11-06
Smart Low Side Power Switch
HITFET BTS 3410G
Electrical Characteristics
Parameter
at
T
j
= 25°C, unless otherwise specified
Dynamic Characteristics
Turn-on time
V
IN
to 90%
I
D
:
t
on
t
off
-dV
DS
/dt
on
dV
DS
/dt
off
-
-
-
-
45
60
0.4
0.6
100
100
1.5
1.5
V/µs
µs
R
L
= 4.7
W,
V
IN
= 0 to 10 V,
V
bb
= 12 V
Turn-off time
V
IN
to 10%
I
D
:
R
L
= 4.7
W,
V
IN
= 10 to 0 V,
V
bb
= 12 V
Slew rate on
70 to 50%
V
bb
:
R
L
= 4.7
W,
V
IN
= 0 to 10 V,
V
bb
= 12 V
Slew rate off
50 to 70%
V
bb
:
R
L
= 4.7
W,
V
IN
= 10 to 0 V,
V
bb
= 12 V
Protection Functions
1)
Thermal overload trip temperature
Thermal hysteresis
2)
Input current protection mode
Input current protection mode
T
j
= 150 °C
Unclamped single pulse inductive energy
2)
each channel
I
D
= 0.9 A,
T
j
= 25 °C,
V
bb
= 12 V
E
AS
150
-
-
mJ
T
jt
DT
jt
I
IN(Prot)
I
IN(Prot)
150
-
25
-
175
10
50
40
-
-
300
300
°C
K
µA
Symbol
min.
Values
typ.
max.
Unit
Inverse Diode
Inverse diode forward voltage
I
F
= 7 A,
t
m
= 250 µs,
V
IN
= 0 V,
t
P
= 300 µs
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2not subject to production test, specified by design
V
SD
-
1
-
V
Datasheet
5
Rev. 1.3, 2007-11-06
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