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BUZ73AH

Description
SIPMOS Power Transistor
CategoryDiscrete semiconductor    The transistor   
File Size525KB,14 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BUZ73AH Overview

SIPMOS Power Transistor

BUZ73AH Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeTO-220AB
package instructionGREEN, PLASTIC, TO-220, 3 PIN
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Is SamacsysN
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)120 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)5.5 A
Maximum drain-source on-resistance0.6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)40 W
Maximum pulsed drain current (IDM)22 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1

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Description SIPMOS Power Transistor MOSFET N-CH 200V 5.5A TO-220

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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