BXY42
HiRel
Silicon PIN Diode
HiRel
Discrete and Microwave
Semiconductor
PIN Diode for high speed switching of
RF signals
Very low capacitance
Hermetically sealed microwave package
Space Qualified
ESA/SCC Detail Spec. No.: 5513/017
Type Variant No.s 01 to 02
T
T1
ESD: Electrostatic discharge
sensitive device,
observe handling precautions!
Type
BXY42-T (ql)
BXY42-T1 (ql)
Marking
-
Ordering Code
see below
Pin Configuration
Package
T
T1
1
1
2
2
(ql) Quality Level:
P: Professional Quality
H: High Rel Quality
S: Space Quality
ES: ESA Space Quality
(see order instructions for ordering example)
IFAG IMM RPD D HIR
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V2, February 2011
BXY42
Maximum Ratings
Parameter
Reverse Voltage
Peak Forward Current
1)
Power Dissipation
BXY42-T
2)
BXY42-T1
3)
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Junction Temperature
Thermal Resistance Junction-Case
BXY42-T
BXY42-T1
4)
Symbol
V
R
I
FM
P
tot
Values
50
5
Unit
V
A
mW
600
350
T
op
T
stg
T
sol
T
j
R
th(j-c)
200
350
-55 to +175
-65 to +175
+250
175
°C
°C
°C
°C
K/W
Notes.:
1.) At t
p
= 1,0µs, Duty Cycle=0,001%
2.) At T
CASE
= 55 °C. For T
CASE
> 55 °C derating is required.
3.) At T
CASE
= 52,5 °C. For T
CASE
> 52,5 °C derating is required.
4.) During 5 sec. maximum. The same terminal shall not be resoldered until 5 minutes have
elapsed.
Electrical Characteristics
at T
A
=25°C; unless otherwise specified
Parameter
Symbol
min.
DC Characteristics
Reverse Current 1
V
R1
=50V
Reverse Current 2
V
R2
=40V
Forward Voltage
I
F
=100mA
V
F
-
0,97
1,1
V
I
R2
-
-
5
nA
I
R1
-
-
10
µA
Values
typ.
max.
Unit
IFAG IMM RPD D HIR
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V2, February 2011
BXY42
Edition 2011-02
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© Infineon Technologies AG 2011
All Rights Reserved.
Attention please!
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics (“Beschaffenheitsgarantie“). With respect to any examples or
hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual
property rights of an third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For
information on the types in question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in life-support devices or systems with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system, or to affect
the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or to
support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
IFAG IMM RPD D HIR
5 of 5
V2, February 2011
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